The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • C. Y. Chan
  • X. M. Meng
  • M. K. Fung
  • I. Bello
  • Y. Lifshitz
  • S. T. Lee
  • X. Jiang

Detail(s)

Original languageEnglish
Pages (from-to)4749-4753
Journal / PublicationAngewandte Chemie - International Edition
Volume44
Issue number30
Publication statusPublished - 25 Jul 2005

Abstract

(Chemical Equation Presented) Growing pains: A new surface reaction mechanism for the growth of films of cubic BN (cBN) in an electron cyclotron resonance plasma fed with a reactive gas mixture (BF3/H 2/N2) is revealed. The excited plasma contains reactive H, F, BFx, and NHx species which are responsible for the etching of hexagonal BN (mainly through F atoms) and for the growth of the cBN crystals (through BFx and NHx species; see picture). © 2005 Wiley-VCH Verlag GmbH & Co. KGaA.

Research Area(s)

  • Chemical vapor deposition, Crystal growth, Nitrides, Plasma chemistry, Reaction mechanisms

Citation Format(s)

The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species. / Zhang, W. J.; Chan, C. Y.; Meng, X. M. et al.
In: Angewandte Chemie - International Edition, Vol. 44, No. 30, 25.07.2005, p. 4749-4753.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review