The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 4749-4753 |
Journal / Publication | Angewandte Chemie - International Edition |
Volume | 44 |
Issue number | 30 |
Publication status | Published - 25 Jul 2005 |
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Abstract
(Chemical Equation Presented) Growing pains: A new surface reaction mechanism for the growth of films of cubic BN (cBN) in an electron cyclotron resonance plasma fed with a reactive gas mixture (BF3/H 2/N2) is revealed. The excited plasma contains reactive H, F, BFx, and NHx species which are responsible for the etching of hexagonal BN (mainly through F atoms) and for the growth of the cBN crystals (through BFx and NHx species; see picture). © 2005 Wiley-VCH Verlag GmbH & Co. KGaA.
Research Area(s)
- Chemical vapor deposition, Crystal growth, Nitrides, Plasma chemistry, Reaction mechanisms
Citation Format(s)
The mechanism of chemical vapor deposition of cubic boron nitride films from fluorine-containing species. / Zhang, W. J.; Chan, C. Y.; Meng, X. M. et al.
In: Angewandte Chemie - International Edition, Vol. 44, No. 30, 25.07.2005, p. 4749-4753.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review