The influence of structural properties on conductivity and luminescence of MBE grown InN

P. Specht; R. Armitage; J. Ho; E. Gunawan; Q. Yang; X. Xu; C. Kisielowski; E. R. Weber

doi:10.1016/j.jcrysgro.2004.05.097

Author(s)

P. Specht
R. Armitage
E. Gunawan
Q. Yang
X. Xu
C. Kisielowski
E. R. Weber

Detail(s)

Original language	English
Pages (from-to)	111-118
Journal / Publication	Journal of Crystal Growth
Volume	269
Issue number	1
Publication status	Published - 15 Aug 2004
Externally published	Yes

Conference

Title	Proceedings of the First ONR International Indium Nitride Work
Place	Australia
City	Fremantle
Period	16 - 20 November 2003

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2004.05.097 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-3342941787&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(15f79039-200d-42d5-a3c8-84010701b2f0).html

Abstract

Within the last few years indium nitride (InN) gained substantial interest due to its controversially discussed apparent band gap and its predicted highest maximum electron mobility among several III-V compounds, including Al(Ga)N and GaAs. The band gap of epitaxial InN has been recently reported to be around 0.7eV rather than the previously accepted value of 1.9eV obtained from polycrystalline films. Thus, InN could be a promising material for applications in infrared opto-electronics or high-speed electronics. However, the structural quality of the InN epilayers is still inferior to GaN and needs to be improved. Also, the role of many contaminants in InN and their effect on the epilayer's conductivity and/or luminescence properties is still under investigation. This work describes recent studies of InN growth by molecular beam epitaxy on sapphire (0001) substrates. The effect of buffer layer variations including a prior substrate nitridation step is discussed. Structural properties (X-ray diffraction, AFM and TEM images) and chemical profiles (SIMS) will be correlated to Hall data and Photo-luminescence spectra. The role of oxygen and hydrogen as possible donors in InN will be discussed. © 2004 Published by Elsevier B.V.

Research Area(s)

A1. Crystal structure, A1. Impurities in thin films, A1. X-ray diffraction, A3. Molecular beam epitaxy, B1. Indium nitride

Citation Format(s)

[ RIS ] [ BibTeX ]

The influence of structural properties on conductivity and luminescence of MBE grown InN. / Specht, P.; Armitage, R.; Ho, J. et al.
In: Journal of Crystal Growth, Vol. 269, No. 1, 15.08.2004, p. 111-118.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Specht, P, Armitage, R, Ho, J, Gunawan, E, Yang, Q, Xu, X, Kisielowski, C & Weber, ER 2004, 'The influence of structural properties on conductivity and luminescence of MBE grown InN', Journal of Crystal Growth, vol. 269, no. 1, pp. 111-118. https://doi.org/10.1016/j.jcrysgro.2004.05.097

Specht, P., Armitage, R., Ho, J., Gunawan, E., Yang, Q., Xu, X., Kisielowski, C., & Weber, E. R. (2004). The influence of structural properties on conductivity and luminescence of MBE grown InN. Journal of Crystal Growth, 269(1), 111-118. https://doi.org/10.1016/j.jcrysgro.2004.05.097

Specht P, Armitage R, Ho J, Gunawan E, Yang Q, Xu X et al. The influence of structural properties on conductivity and luminescence of MBE grown InN. Journal of Crystal Growth. 2004 Aug 15;269(1):111-118. doi: 10.1016/j.jcrysgro.2004.05.097

Specht, P. ; Armitage, R. ; Ho, J. et al. / The influence of structural properties on conductivity and luminescence of MBE grown InN. In: Journal of Crystal Growth. 2004 ; Vol. 269, No. 1. pp. 111-118.