The importance of bias pulse rise time for determining shallow implanted dose in plasma immersion ion implantation

D. T K Kwok; M. M M Bilek; D. R. McKenzie; P. K. Chu

doi:10.1063/1.1563063

The importance of bias pulse rise time for determining shallow implanted dose in plasma immersion ion implantation

D. T K Kwok
, M. M M Bilek
, D. R. McKenzie
, P. K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

32 Citations (Scopus)

Abstract

The importance of bias pulse rise time for determining shallow implanted dose in plasma immersion ion implantation was studied. The ion energy distributions originating from the rise and fall times of the voltage pulse were calculated by performing particle-in-cell (PIC) simulations. The results indicated that the proportion of shallow implanted dose can be most effectively controlled by adjusting the relative temporal extent of the rise time.

Original language	English
Pages (from-to)	1827-1829
Journal	Applied Physics Letters
Volume	82
Issue number	12
DOIs	https://doi.org/10.1063/1.1563063
Publication status	Published - 24 Mar 2003

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title = "The importance of bias pulse rise time for determining shallow implanted dose in plasma immersion ion implantation",

abstract = "The importance of bias pulse rise time for determining shallow implanted dose in plasma immersion ion implantation was studied. The ion energy distributions originating from the rise and fall times of the voltage pulse were calculated by performing particle-in-cell (PIC) simulations. The results indicated that the proportion of shallow implanted dose can be most effectively controlled by adjusting the relative temporal extent of the rise time.",

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AU - Kwok, D. T K

AU - Bilek, M. M M

AU - McKenzie, D. R.

AU - Chu, P. K.

PY - 2003/3/24

Y1 - 2003/3/24

N2 - The importance of bias pulse rise time for determining shallow implanted dose in plasma immersion ion implantation was studied. The ion energy distributions originating from the rise and fall times of the voltage pulse were calculated by performing particle-in-cell (PIC) simulations. The results indicated that the proportion of shallow implanted dose can be most effectively controlled by adjusting the relative temporal extent of the rise time.

AB - The importance of bias pulse rise time for determining shallow implanted dose in plasma immersion ion implantation was studied. The ion energy distributions originating from the rise and fall times of the voltage pulse were calculated by performing particle-in-cell (PIC) simulations. The results indicated that the proportion of shallow implanted dose can be most effectively controlled by adjusting the relative temporal extent of the rise time.

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DO - 10.1063/1.1563063

M3 - RGC 21 - Publication in refereed journal

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VL - 82

SP - 1827

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

The importance of bias pulse rise time for determining shallow implanted dose in plasma immersion ion implantation

Abstract

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