The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

8 Scopus Citations
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Author(s)

  • Y.L. Chueh
  • W.W. Wu
  • S.W. Lee
  • L.J. Chen
  • L.J. Chou

Detail(s)

Original languageEnglish
Pages (from-to)478-482
Journal / PublicationThin Solid Films
Volume469-470
Online published12 Sep 2004
Publication statusPublished - 22 Dec 2004
Externally publishedYes

Abstract

Self-assembled SiGe quantum rings (QRs) on Si0.8Ge0.2 substrate has been formed by thermal annealing of the samples with capping Au thin films at 1100 °C in N2 ambient. Miniature quantum rings have a narrow distribution of diameter and height of 27.9±1.7 and 1.53±0.10 nm, respectively. The formation of quantum rings was found to be mediated by the Au nanoparticles. As the size of Au nanoparticles can be adjusted, the method promises to be an effective technique to produce high density, uniform in size quantum rings. © 2004 Elsevier B.V. All rights reserved.

Research Area(s)

  • Nanorings, Quantum rings, Self-assembly, SiGe

Citation Format(s)

The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon. / He, J.H.; Chueh, Y.L.; Wu, W.W.; Lee, S.W.; Chen, L.J.; Chou, L.J.

In: Thin Solid Films, Vol. 469-470, 22.12.2004, p. 478-482.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review