The formation of epitaxial habit planes at MoSi2 IrSi interfaces
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1935-1940 |
| Journal / Publication | Scripta Metallurgica et Materiala |
| Volume | 24 |
| Issue number | 10 |
| Publication status | Published - Oct 1990 |
| Externally published | Yes |
Link(s)
Bibliographic Note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.
Citation Format(s)
The formation of epitaxial habit planes at MoSi2 IrSi interfaces. / Chou, T. C.; Nieh, T. G.
In: Scripta Metallurgica et Materiala, Vol. 24, No. 10, 10.1990, p. 1935-1940.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
