The Fabrication of Grating for 1.55 μm InGaAsP DFB Laser Array by E-Beam Lithography

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)

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Detail(s)

Original languageEnglish
Title of host publicationFifth Asia-Pacific Conference Communications and Fourth Optoloelectronics and Communications Conference on communications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1545-1547
Volume2
ISBN (Print)7-5635-0402-8
Publication statusPublished - Oct 1999

Conference

Title5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999
PlaceChina
CityBeijing
Period18 - 22 October 1999

Abstract

First-order and second-order gratings for the 1.55 μm wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO3:HBr:H2O and reactive ion etching using the gas mixture CH4:H2:Ar2. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.

Research Area(s)

  • Optical device fabrication, Gratings, Optical arrays, Wet etching, Chemical lasers, Indium phosphide, Gas lasers, Lithography, Argon, Resists

Citation Format(s)

The Fabrication of Grating for 1.55 μm InGaAsP DFB Laser Array by E-Beam Lithography. / Yue-Bun, Edwin; Wong, Polis Wing Han; Xuejin, Yan; Ye, Peng; Fan, Zhou.

Fifth Asia-Pacific Conference Communications and Fourth Optoloelectronics and Communications Conference on communications. Vol. 2 Institute of Electrical and Electronics Engineers Inc., 1999. p. 1545-1547.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)