The Fabrication of Grating for 1.55 μm InGaAsP DFB Laser Array by E-Beam Lithography

Edwin Yue-Bun; Polis Wing Han Wong; Yan Xuejin; Peng Ye; Zhou Fan

doi:10.1109/APCC.1999.820579

The Fabrication of Grating for 1.55 μm InGaAsP DFB Laser Array by E-Beam Lithography

Edwin Yue-Bun, Polis Wing Han Wong, Yan Xuejin, Peng Ye, Zhou Fan

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

First-order and second-order gratings for the 1.55 μm wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO₃:HBr:H₂O and reactive ion etching using the gas mixture CH₄:H₂:Ar₂. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.

Original language	English
Title of host publication	Fifth Asia-Pacific Conference Communications and Fourth Optoloelectronics and Communications Conference on communications
Publisher	IEEE
Pages	1545-1547
Volume	2
ISBN (Print)	7-5635-0402-8
DOIs	https://doi.org/10.1109/APCC.1999.820579
Publication status	Published - Oct 1999
Event	5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999 - Beijing, China Duration: 18 Oct 1999 → 22 Oct 1999

Conference

Conference	5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999
Place	China
City	Beijing
Period	18/10/99 → 22/10/99

Research Keywords

Optical device fabrication
Gratings
Optical arrays
Wet etching
Chemical lasers
Indium phosphide
Gas lasers
Lithography
Argon
Resists

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@inproceedings{351bb84c432347458b29d1c17aaacd3d,

title = "The Fabrication of Grating for 1.55 μm InGaAsP DFB Laser Array by E-Beam Lithography",

abstract = "First-order and second-order gratings for the 1.55 μm wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO3:HBr:H2O and reactive ion etching using the gas mixture CH4:H2:Ar2. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.",

keywords = "Optical device fabrication, Gratings, Optical arrays, Wet etching, Chemical lasers, Indium phosphide, Gas lasers, Lithography, Argon, Resists",

author = "Edwin Yue-Bun and Wong, {Polis Wing Han} and Yan Xuejin and Peng Ye and Zhou Fan",

year = "1999",

month = oct,

doi = "10.1109/APCC.1999.820579",

language = "English",

isbn = "7-5635-0402-8",

volume = "2",

pages = "1545--1547",

booktitle = "Fifth Asia-Pacific Conference Communications and Fourth Optoloelectronics and Communications Conference on communications",

publisher = "IEEE",

address = "United States",

note = "5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999 ; Conference date: 18-10-1999 Through 22-10-1999",

}

Yue-Bun, E, Wong, PWH, Xuejin, Y, Ye, P & Fan, Z 1999, The Fabrication of Grating for 1.55 μm InGaAsP DFB Laser Array by E-Beam Lithography. in Fifth Asia-Pacific Conference Communications and Fourth Optoloelectronics and Communications Conference on communications. vol. 2, IEEE, pp. 1545-1547, 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999, Beijing, China, 18/10/99. https://doi.org/10.1109/APCC.1999.820579

The Fabrication of Grating for 1.55 μm InGaAsP DFB Laser Array by E-Beam Lithography. / Yue-Bun, Edwin; Wong, Polis Wing Han; Xuejin, Yan et al.
Fifth Asia-Pacific Conference Communications and Fourth Optoloelectronics and Communications Conference on communications. Vol. 2 IEEE, 1999. p. 1545-1547.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - The Fabrication of Grating for 1.55 μm InGaAsP DFB Laser Array by E-Beam Lithography

AU - Yue-Bun, Edwin

AU - Wong, Polis Wing Han

AU - Xuejin, Yan

AU - Ye, Peng

AU - Fan, Zhou

PY - 1999/10

Y1 - 1999/10

N2 - First-order and second-order gratings for the 1.55 μm wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO3:HBr:H2O and reactive ion etching using the gas mixture CH4:H2:Ar2. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.

AB - First-order and second-order gratings for the 1.55 μm wavelength InGaAsP laser have been fabricated by e-beam lithography on the InP substrate. The pattern is transferred into the InP substrate by wet chemical etching using HNO3:HBr:H2O and reactive ion etching using the gas mixture CH4:H2:Ar2. The experimental results have proven that a PMMA resist of 200 nm thickness can not only stand up to wet chemical etching but also to reactive ion etching.

KW - Optical device fabrication

KW - Gratings

KW - Optical arrays

KW - Wet etching

KW - Chemical lasers

KW - Indium phosphide

KW - Gas lasers

KW - Lithography

KW - Argon

KW - Resists

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U2 - 10.1109/APCC.1999.820579

DO - 10.1109/APCC.1999.820579

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 7-5635-0402-8

VL - 2

SP - 1545

EP - 1547

BT - Fifth Asia-Pacific Conference Communications and Fourth Optoloelectronics and Communications Conference on communications

PB - IEEE

T2 - 5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference, APCC/OECC 1999

Y2 - 18 October 1999 through 22 October 1999

ER -

The Fabrication of Grating for 1.55 μm InGaAsP DFB Laser Array by E-Beam Lithography

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