The electro-optic properties of interdiffused InGaAs/Inp quantum well structures

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Bernard L. Weiss
  • Y. Chan
  • W. C. Shiu
  • E. Herbert Li

Detail(s)

Original languageEnglish
Pages (from-to)3418-3425
Journal / PublicationJournal of Applied Physics
Volume88
Issue number6
Publication statusPublished - Sept 2000
Externally publishedYes

Abstract

We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the barrier layer, the well layer, and the concentration ratio of diffused species at the well/barrier interface. The quantum confined Stark effect is considered including the exciton and full subband under an applied electric field. Results show interesting optical properties for the TE and TM polarization and a tunable operation wavelength near 1.55 μm for modulators. © 2000 American Institute of Physics.

Citation Format(s)

The electro-optic properties of interdiffused InGaAs/Inp quantum well structures. / Weiss, Bernard L.; Chan, Y.; Shiu, W. C. et al.
In: Journal of Applied Physics, Vol. 88, No. 6, 09.2000, p. 3418-3425.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review