The Effects of Plasma-Induced Etching and Doping of MoSe2 Catalyst for the Improvement of Electrochemical Activity

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review

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Detail(s)

Original languageEnglish
Title of host publication12th EU-Japan Joint Symposium on Plasma Processing (JSPP-12) and 15th Asia-Pacific Conference on Plasma Science and Technology (APCPST-15)
Publication statusPublished - 1 Apr 2021

Conference

Title12th EU-Japan Joint Symposium on Plasma Processing (JSPP-12) and 15th Asia-Pacific Conference on Plasma Science and Technology (APCPST-15)
Locationvirtual
PlaceJapan
Period29 March - 2 April 2021

Abstract

MoSe2 nanosheets are functionalized by tuning the ion energy and flux of radicals in argon and oxygen plasma to tailor the etching and doping. Plasma simulation and molecular dynamics fathom the interactions between the plasma and MoSe2 nanosheets. The finite element method (FEM) and first-principles density-functional theory (DFT) calculations predict the property changes of the catalyst after plasma functionalization. Optimum plasma processing parameters produce balanced etching, doping effects and vacancies reservation on the improvement of active sites, conductivity and decrease of absorption energy, consequently enhance the hydrogen evolution reaction (HER).

Bibliographic Note

Information for this record is supplemented by the author(s) concerned.

Citation Format(s)

The Effects of Plasma-Induced Etching and Doping of MoSe2 Catalyst for the Improvement of Electrochemical Activity. / XIAO, Dezhi; Chu, Paul K.

12th EU-Japan Joint Symposium on Plasma Processing (JSPP-12) and 15th Asia-Pacific Conference on Plasma Science and Technology (APCPST-15). 2021.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)peer-review