The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO

H. H. Wang; J. S. Tian; C. Y. Chen; H. H. Huang; Y. C. Yeh; P. Y. Deng; L. Chang; Y. H. Chu; Y. R. Wu; J. H. He

doi:10.1109/JPHOT.2015.2415672

The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO

H. H. Wang
, J. S. Tian
, C. Y. Chen
, H. H. Huang
, Y. C. Yeh
, P. Y. Deng
, L. Chang
, Y. H. Chu
, Y. R. Wu
, J. H. He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO₃ substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.

Original language	English
Article number	6800708
Journal	IEEE Photonics Journal
Volume	7
Issue number	2
Online published	20 Mar 2015
DOIs	https://doi.org/10.1109/JPHOT.2015.2415672
Publication status	Published - Apr 2015
Externally published	Yes

Research Keywords

II-VI semiconductor materials
Optical films
optical polarization
photoluminescence
strain

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10.1109/JPHOT.2015.2415672

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@article{c30312f061aa48a38d29cdd064613fba,

title = "The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO",

abstract = "The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.",

keywords = "II-VI semiconductor materials, Optical films, optical polarization, photoluminescence, strain",

author = "Wang, \{H. H.\} and Tian, \{J. S.\} and Chen, \{C. Y.\} and Huang, \{H. H.\} and Yeh, \{Y. C.\} and Deng, \{P. Y.\} and L. Chang and Chu, \{Y. H.\} and Wu, \{Y. R.\} and He, \{J. H.\}",

year = "2015",

month = apr,

doi = "10.1109/JPHOT.2015.2415672",

language = "English",

volume = "7",

journal = "IEEE Photonics Journal",

issn = "1943-0655",

publisher = "IEEE",

number = "2",

}

TY - JOUR

T1 - The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO

AU - Wang, H. H.

AU - Tian, J. S.

AU - Chen, C. Y.

AU - Huang, H. H.

AU - Yeh, Y. C.

AU - Deng, P. Y.

AU - Chang, L.

AU - Chu, Y. H.

AU - Wu, Y. R.

AU - He, J. H.

PY - 2015/4

Y1 - 2015/4

N2 - The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.

AB - The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.

KW - II-VI semiconductor materials

KW - Optical films

KW - optical polarization

KW - photoluminescence

KW - strain

UR - https://www.scopus.com/pages/publications/84927127783

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84927127783&origin=recordpage

U2 - 10.1109/JPHOT.2015.2415672

DO - 10.1109/JPHOT.2015.2415672

M3 - RGC 21 - Publication in refereed journal

SN - 1943-0655

VL - 7

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 2

M1 - 6800708

ER -

The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO

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