The effect of ion bombardment on the nucleation of CVD diamond

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • X. S. Sun
  • N. Wang
  • H. K. Woo
  • G. Yu
  • I. Bello
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)1414-1417
Journal / PublicationDiamond and Related Materials
Volume8
Issue number8-9
Publication statusPublished - Aug 1999

Abstract

The nucleation effect of CVD diamond by ion bombardment was studied by a two-step process. In the first step, hydrocarbon and hydrogen ion bombardment was used to induce nucleation on mirror-polished (001) Si substrates. In the second step, diamond films were subsequently deposited on the ion-bombarded substrates by a conventional hot filament chemical vapor deposition. It was found that after the ion bombardment, an amorphous layer embedded with nano-crystalline diamond particles formed on the Si substrate. These nano-crystalline diamond particles were proposed to serve as the nucleation centers for the growth in the second step. The nucleation density depended strongly on the ion dosage and a nucleation density of up to 2 × 109 cm-2 could be achieved under optimized conditions. © 1999 Elsevier Science S.A. All rights reserved.

Research Area(s)

  • Diamond films, Interface, Ion bombardment, Nucleation

Citation Format(s)

The effect of ion bombardment on the nucleation of CVD diamond. / Sun, X. S.; Wang, N.; Woo, H. K. et al.
In: Diamond and Related Materials, Vol. 8, No. 8-9, 08.1999, p. 1414-1417.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review