The effect of amorphous Si on the epitaxial growth of CoSi2 by Co/Si/Ti/Si solid state epitaxy

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

View graph of relations

Author(s)

  • Xin-Ping Qu
  • Guo-Ping Ru
  • Jian-Hai Liu
  • Hong-Xiang Mo
  • Jing Liu
  • Bing-Zong Li

Related Research Unit(s)

Detail(s)

Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication1998 5th International Conference on Solid-state and Integrated Circuit Technology
PublisherIEEE
Pages264-267
ISBN (print)0-7803-4306-9
Publication statusPublished - Oct 1998

Conference

Title1998 5th International Conference on Solid-State and Integrated Circuit Technology
Location
PlaceChina
CityBeijing
Period21 - 23 October 1998

Abstract

An amorphous Si layer was added for the reduction of Si consumption in the ultra-shallow junctions during silicide formation. The present experiments show an epitaxial CoSi2 layer with good single-crystalline quality was grown by Co/Si/Ti/Si(100) reaction. By varying the thickness of interposed amorphous Si, its effect on the epitaxial CoSi2 growth and self-aligned process was investigated. The film structure and crystallinity were characterized by X-ray diffraction (XRD). Rutherford backscattering (RBS)/channeling and transmission electron microscopy (TEM). RBS/C shows that the channeling yield minimum of CoSi2 formed by Co(15 nm)/Si(4 nm)/Ti(3 nm)/Si(100) reaction is 5.2%. It was also demonstrated that within a certain thickness range for the deposited Si, the self-aligned silicide (SALICIDE) contact structure can be formed by such a multilayer.

Bibliographic Note

Research Unit(s) information for this publication is provided by the author(s) concerned.

Citation Format(s)

The effect of amorphous Si on the epitaxial growth of CoSi2 by Co/Si/Ti/Si solid state epitaxy. / Qu, Xin-Ping; Ru, Guo-Ping; Liu, Jian-Hai et al.
Proceedings: 1998 5th International Conference on Solid-state and Integrated Circuit Technology. IEEE, 1998. p. 264-267.

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review