The Distortion-Adjusted Change of Thermal Expansion Behavior of Cubic Magnetic Semiconductor (Sc1−xMx)F3 (M = Al, Fe)

Fei Han; Jun Chen; Lei Hu; Yang Ren; Yangchun Rong; Zhao Pan; Jinxia Deng; Xianran Xing; M. A. White

doi:10.1111/jace.14399

The Distortion-Adjusted Change of Thermal Expansion Behavior of Cubic Magnetic Semiconductor (Sc_1−xM_x)F₃ (M = Al, Fe)

Fei Han, Jun Chen^*, Lei Hu, Yang Ren, Yangchun Rong, Zhao Pan, Jinxia Deng, Xianran Xing, M. A. White

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

15 Citations (Scopus)

Abstract

For the study of negative thermal expansion (NTE) compounds, it is critical to effectively control the thermal expansion. In this letter, a chemical approach has been taken to control the thermal expansion behavior in ScF₃ which has a strong NTE. Owing to the difference of radius of substituting ions, local distortion inevitably emerges in the lattice matrix, which is verified by pair distribution function analysis of high-resolution synchrotron X-ray scattering. It is a valuable clue that the thermal expansion behaviors in the ScF₃ based systems and other trifluorides are correlated closely to structural distortion of metal-F-metal linkages. In addition, the introduction of 3d transition-metal enables its semiconductor and ferromagnetic characteristics. This study provides important reference opinion for the control of thermal expansion and introduction of multifunctionalization for those NTE compounds with open framework structure.

Original language	English
Pages (from-to)	2886-2888
Journal	Journal of the American Ceramic Society
Volume	99
Issue number	9
DOIs	https://doi.org/10.1111/jace.14399
Publication status	Published - 1 Sept 2016
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

conductivity
dopants/doping
fluorine/fluorine compounds
thermal expansions

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title = "The Distortion-Adjusted Change of Thermal Expansion Behavior of Cubic Magnetic Semiconductor (Sc1−xMx)F3 (M = Al, Fe)",

abstract = "For the study of negative thermal expansion (NTE) compounds, it is critical to effectively control the thermal expansion. In this letter, a chemical approach has been taken to control the thermal expansion behavior in ScF3 which has a strong NTE. Owing to the difference of radius of substituting ions, local distortion inevitably emerges in the lattice matrix, which is verified by pair distribution function analysis of high-resolution synchrotron X-ray scattering. It is a valuable clue that the thermal expansion behaviors in the ScF3 based systems and other trifluorides are correlated closely to structural distortion of metal-F-metal linkages. In addition, the introduction of 3d transition-metal enables its semiconductor and ferromagnetic characteristics. This study provides important reference opinion for the control of thermal expansion and introduction of multifunctionalization for those NTE compounds with open framework structure.",

keywords = "conductivity, dopants/doping, fluorine/fluorine compounds, thermal expansions",

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T1 - The Distortion-Adjusted Change of Thermal Expansion Behavior of Cubic Magnetic Semiconductor (Sc1−xMx)F3 (M = Al, Fe)

AU - Han, Fei

AU - Chen, Jun

AU - Hu, Lei

AU - Ren, Yang

AU - Rong, Yangchun

AU - Pan, Zhao

AU - Deng, Jinxia

AU - Xing, Xianran

AU - White, M. A.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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N2 - For the study of negative thermal expansion (NTE) compounds, it is critical to effectively control the thermal expansion. In this letter, a chemical approach has been taken to control the thermal expansion behavior in ScF3 which has a strong NTE. Owing to the difference of radius of substituting ions, local distortion inevitably emerges in the lattice matrix, which is verified by pair distribution function analysis of high-resolution synchrotron X-ray scattering. It is a valuable clue that the thermal expansion behaviors in the ScF3 based systems and other trifluorides are correlated closely to structural distortion of metal-F-metal linkages. In addition, the introduction of 3d transition-metal enables its semiconductor and ferromagnetic characteristics. This study provides important reference opinion for the control of thermal expansion and introduction of multifunctionalization for those NTE compounds with open framework structure.

AB - For the study of negative thermal expansion (NTE) compounds, it is critical to effectively control the thermal expansion. In this letter, a chemical approach has been taken to control the thermal expansion behavior in ScF3 which has a strong NTE. Owing to the difference of radius of substituting ions, local distortion inevitably emerges in the lattice matrix, which is verified by pair distribution function analysis of high-resolution synchrotron X-ray scattering. It is a valuable clue that the thermal expansion behaviors in the ScF3 based systems and other trifluorides are correlated closely to structural distortion of metal-F-metal linkages. In addition, the introduction of 3d transition-metal enables its semiconductor and ferromagnetic characteristics. This study provides important reference opinion for the control of thermal expansion and introduction of multifunctionalization for those NTE compounds with open framework structure.

KW - conductivity

KW - dopants/doping

KW - fluorine/fluorine compounds

KW - thermal expansions

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