The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Y. Huang
  • X. D. Chen
  • S. Fung
  • C. D. Beling
  • C. C. Ling
  • Z. F. Wei
  • S. J. Xu

Detail(s)

Original languageEnglish
Pages (from-to)1120-1126
Journal / PublicationJournal of Applied Physics
Volume96
Issue number2
Publication statusPublished - 15 Jul 2004
Externally publishedYes

Abstract

The carrier concentration and scattering mechanism in undoped GaN film grown on sapphire were investigated. The film was grown on sapphire using metal organic chemical vapor deposition (MOCVD). Confocal micro-Raman spectroscopic measurements and temperature-dependant Hall (TDH) measurements were performed for the study of the depth distribution of the carrier density across the GaN film. The existence of a nonuniform spatial distribution of free carriers in the film with a highly conductive layer of ∼1 μm thickness near the GaN sapphire boundary was confirmed from the study. The electron mobility limiting effect of nitrogen vacancies on GaN bulk film was also discussed.

Citation Format(s)

The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire. / Huang, Y.; Chen, X. D.; Fung, S. et al.
In: Journal of Applied Physics, Vol. 96, No. 2, 15.07.2004, p. 1120-1126.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review