The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire
- Y. Huang
- , X. D. Chen
- , S. Fung
- , C. D. Beling
- , C. C. Ling
- , Z. F. Wei
- , S. J. Xu
- , C. Y. Zhi
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
21
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