The Coupling of Grain Growth and Twinning in FCC Metals

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Article number012026
Number of pages8
Journal / PublicationIOP Conference Series: Materials Science and Engineering
Volume580
Issue number1
Publication statusPublished - 1 Aug 2019

Conference

Title40th Riso International Symposium on Materials Science: Metal Microstructures in 2D, 3D and 4D
PlaceDenmark
CityCopenhagen
Period2 - 6 September 2019

Abstract

Coherent twin boundaries (CTBs) routinely form during the annealing of polycrystalline metals, in the absence of an applied stress. Molecular dynamics (MD) simulations of normal grain growth in nanocrystalline metals show such annealing twins as well the formation of twin junctions. MD simulations and theoretical analyses demonstrate how these junctions form and that their formation necessarily retards grain boundary (GB) migration. Both CTB and GB migration occurs via disconnection motion. We identify the types of disconnections important for CTB migration and show the disconnection pile-ups at TJs during GB migration are responsible for CTB formation in the vicinity of TJs. Analysis further shows that at least two types twinning partials are to be expected during TJ migration and that these give rise to the multiple twinning near migrating TJs observed in the MD simulations.