The Charge-Based Flicker Noise Model for HEMTs
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 125-128 |
| Journal / Publication | IEEE Microwave and Wireless Components Letters |
| Volume | 32 |
| Issue number | 2 |
| Online published | 15 Oct 2021 |
| Publication status | Published - Feb 2022 |
| Externally published | Yes |
Link(s)
Abstract
The flicker noise modeling is of great significance in many applications of high electron mobility transistors (HEMTs) in low noise circuits. In this letter, a novel charge-based flicker noise model for HEMTs is proposed, which introduces the trap-charge fluctuation-based flicker noise modeling method to the charge-based MIT virtual source (MVS) HEMT model. This model is highly compatible with the MVS HEMT model. It can predict the flicker noise performance in a physically rigorous and accurate way. This model is verified by the excellent agreement between simulations and measurement results. © 2001-2012 IEEE.
Research Area(s)
- Flicker noise, high electron mobility transistors (HEMTs), noise model
Citation Format(s)
The Charge-Based Flicker Noise Model for HEMTs. / Luo, Haorui; Yan, Xu; Hu, Wenrui et al.
In: IEEE Microwave and Wireless Components Letters, Vol. 32, No. 2, 02.2022, p. 125-128.
In: IEEE Microwave and Wireless Components Letters, Vol. 32, No. 2, 02.2022, p. 125-128.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
