TY - JOUR
T1 - The Charge-Based Flicker Noise Model for HEMTs
AU - Luo, Haorui
AU - Yan, Xu
AU - Hu, Wenrui
AU - Guo, Yongxin
PY - 2022/2
Y1 - 2022/2
N2 - The flicker noise modeling is of great significance in many applications of high electron mobility transistors (HEMTs) in low noise circuits. In this letter, a novel charge-based flicker noise model for HEMTs is proposed, which introduces the trap-charge fluctuation-based flicker noise modeling method to the charge-based MIT virtual source (MVS) HEMT model. This model is highly compatible with the MVS HEMT model. It can predict the flicker noise performance in a physically rigorous and accurate way. This model is verified by the excellent agreement between simulations and measurement results. © 2001-2012 IEEE.
AB - The flicker noise modeling is of great significance in many applications of high electron mobility transistors (HEMTs) in low noise circuits. In this letter, a novel charge-based flicker noise model for HEMTs is proposed, which introduces the trap-charge fluctuation-based flicker noise modeling method to the charge-based MIT virtual source (MVS) HEMT model. This model is highly compatible with the MVS HEMT model. It can predict the flicker noise performance in a physically rigorous and accurate way. This model is verified by the excellent agreement between simulations and measurement results. © 2001-2012 IEEE.
KW - Flicker noise
KW - high electron mobility transistors (HEMTs)
KW - noise model
UR - http://www.scopus.com/inward/record.url?scp=85117798127&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85117798127&origin=recordpage
U2 - 10.1109/LMWC.2021.3118708
DO - 10.1109/LMWC.2021.3118708
M3 - RGC 21 - Publication in refereed journal
SN - 1531-1309
VL - 32
SP - 125
EP - 128
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 2
ER -