TY - GEN
T1 - Temperature effects on charge transfer mechanisms of nc-ITO embedded ZrHfO high-k nonvolatile memory devices
AU - Yang, Chia-Han
AU - Kuo, Yue
AU - Lin, Chen-Han
AU - Kuo, Way
PY - 2011
Y1 - 2011
N2 - The nanocrystalline ITO embedded Zr-doped HfO 2 high-k dielectric thin film has been made into MOS capacitors for nonvolatile memory studies. The devices showed large charge storage densities, large memory windows, and long charge retention times. In this paper, authors investigated the temperature effect on the charge transport and reliability of this kind of device in the range of 25°C to 125°C. The memory window increased with the increase of the temperature. The temperature influenced the trap and detrap of not only the deeply-trapped but also the loosely-trapped charges. The device lost its charge retention capability with the increase of the temperature. The Schottky emission relationship fitted the device in the positive gate voltage region. However, the Frenkel-Poole mechanism was suitable in the negative gate voltage region. © 2011 Materials Research Society.
AB - The nanocrystalline ITO embedded Zr-doped HfO 2 high-k dielectric thin film has been made into MOS capacitors for nonvolatile memory studies. The devices showed large charge storage densities, large memory windows, and long charge retention times. In this paper, authors investigated the temperature effect on the charge transport and reliability of this kind of device in the range of 25°C to 125°C. The memory window increased with the increase of the temperature. The temperature influenced the trap and detrap of not only the deeply-trapped but also the loosely-trapped charges. The device lost its charge retention capability with the increase of the temperature. The Schottky emission relationship fitted the device in the positive gate voltage region. However, the Frenkel-Poole mechanism was suitable in the negative gate voltage region. © 2011 Materials Research Society.
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U2 - 10.1557/opl.2011.1068
DO - 10.1557/opl.2011.1068
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781605113142
VL - 1337
SP - 27
EP - 33
BT - Materials Research Society Symposium Proceedings
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -