Temperature-dependent tunneling electroresistance in Pt/BaTiO 3/SrRuO3 ferroelectric tunnel junctions

Zheng Wen; Lu You; Junling Wang; Aidong Li; Di Wu

doi:10.1063/1.4823580

Temperature-dependent tunneling electroresistance in Pt/BaTiO ₃/SrRuO₃ ferroelectric tunnel junctions

Zheng Wen
, Lu You
, Junling Wang
, Aidong Li
, Di Wu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

35 Citations (Scopus)

Abstract

Tunneling electroresistance of Pt/BaTiO₃/SrRuO₃ ferroelectric tunnel junctions is investigated as a function of temperature. Two distinct resistance states that are dependent on polarization direction in the BaTiO₃ barrier layer and bipolar resistance switching are observed at various temperatures from 10 to 290 K. The ON/OFF current ratio of Pt/BaTiO₃/SrRuO₃ tunnel junctions increases monotonically with decreasing temperature above 50 K and saturates below 50 K. The enhanced tunneling electroresistance at low temperatures can be ascribed to the suppression of thermally assisted indirect tunneling, which is less sensitive to the polarization reversal of BaTiO₃ compared to the direct tunneling. © 2013 AIP Publishing LLC.

Original language	English
Article number	132913
Journal	Applied Physics Letters
Volume	103
Issue number	13
DOIs	https://doi.org/10.1063/1.4823580
Publication status	Published - 23 Sept 2013
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Temperature-dependent tunneling electroresistance in Pt/BaTiO 3/SrRuO3 ferroelectric tunnel junctions",

abstract = "Tunneling electroresistance of Pt/BaTiO3/SrRuO3 ferroelectric tunnel junctions is investigated as a function of temperature. Two distinct resistance states that are dependent on polarization direction in the BaTiO3 barrier layer and bipolar resistance switching are observed at various temperatures from 10 to 290 K. The ON/OFF current ratio of Pt/BaTiO3/SrRuO3 tunnel junctions increases monotonically with decreasing temperature above 50 K and saturates below 50 K. The enhanced tunneling electroresistance at low temperatures can be ascribed to the suppression of thermally assisted indirect tunneling, which is less sensitive to the polarization reversal of BaTiO3 compared to the direct tunneling. {\textcopyright} 2013 AIP Publishing LLC.",

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T1 - Temperature-dependent tunneling electroresistance in Pt/BaTiO 3/SrRuO3 ferroelectric tunnel junctions

AU - Wen, Zheng

AU - You, Lu

AU - Wang, Junling

AU - Li, Aidong

AU - Wu, Di

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2013/9/23

Y1 - 2013/9/23

N2 - Tunneling electroresistance of Pt/BaTiO3/SrRuO3 ferroelectric tunnel junctions is investigated as a function of temperature. Two distinct resistance states that are dependent on polarization direction in the BaTiO3 barrier layer and bipolar resistance switching are observed at various temperatures from 10 to 290 K. The ON/OFF current ratio of Pt/BaTiO3/SrRuO3 tunnel junctions increases monotonically with decreasing temperature above 50 K and saturates below 50 K. The enhanced tunneling electroresistance at low temperatures can be ascribed to the suppression of thermally assisted indirect tunneling, which is less sensitive to the polarization reversal of BaTiO3 compared to the direct tunneling. © 2013 AIP Publishing LLC.

AB - Tunneling electroresistance of Pt/BaTiO3/SrRuO3 ferroelectric tunnel junctions is investigated as a function of temperature. Two distinct resistance states that are dependent on polarization direction in the BaTiO3 barrier layer and bipolar resistance switching are observed at various temperatures from 10 to 290 K. The ON/OFF current ratio of Pt/BaTiO3/SrRuO3 tunnel junctions increases monotonically with decreasing temperature above 50 K and saturates below 50 K. The enhanced tunneling electroresistance at low temperatures can be ascribed to the suppression of thermally assisted indirect tunneling, which is less sensitive to the polarization reversal of BaTiO3 compared to the direct tunneling. © 2013 AIP Publishing LLC.

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DO - 10.1063/1.4823580

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JO - Applied Physics Letters

JF - Applied Physics Letters

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