Temperature-dependent light-emitting characteristics of InGaN/GaN diodes

Jun Liu; W. S. Tam; H. Wong; V. Filip

doi:10.1016/j.microrel.2008.10.002

Temperature-dependent light-emitting characteristics of InGaN/GaN diodes

Jun Liu
, W. S. Tam
, H. Wong
, V. Filip

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

53 Citations (Scopus)

Abstract

Temperature-dependent light-emitting and current-voltage characteristics of multiple-quantum well (MQW) InGaN/GaN blue LEDs were measured for temperature ranging from 100 to 500 K. The measurement results revealed two kinds of defects that have pronounced impact on the electroluminescent (EL) intensity and device reliability of the LEDs. At low-temperature (300 K), deep traps due to the structure dislocations at the interfaces significantly reduce the efficiency for radiative recombination though they can enhance both forward and reverse currents significantly. In addition, the significant enhancement of trap-assisted tunneling current causes a large heat dissipation and results in a large redshift of the emission peak at high temperature. © 2008 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	38-41
Journal	Microelectronics Reliability
Volume	49
Issue number	1
DOIs	https://doi.org/10.1016/j.microrel.2008.10.002
Publication status	Published - Jan 2009

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title = "Temperature-dependent light-emitting characteristics of InGaN/GaN diodes",

abstract = "Temperature-dependent light-emitting and current-voltage characteristics of multiple-quantum well (MQW) InGaN/GaN blue LEDs were measured for temperature ranging from 100 to 500 K. The measurement results revealed two kinds of defects that have pronounced impact on the electroluminescent (EL) intensity and device reliability of the LEDs. At low-temperature (300 K), deep traps due to the structure dislocations at the interfaces significantly reduce the efficiency for radiative recombination though they can enhance both forward and reverse currents significantly. In addition, the significant enhancement of trap-assisted tunneling current causes a large heat dissipation and results in a large redshift of the emission peak at high temperature. {\textcopyright} 2008 Elsevier Ltd. All rights reserved.",

author = "Jun Liu and Tam, \{W. S.\} and H. Wong and V. Filip",

year = "2009",

month = jan,

doi = "10.1016/j.microrel.2008.10.002",

language = "English",

volume = "49",

pages = "38--41",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd.",

number = "1",

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TY - JOUR

T1 - Temperature-dependent light-emitting characteristics of InGaN/GaN diodes

AU - Liu, Jun

AU - Tam, W. S.

AU - Wong, H.

AU - Filip, V.

PY - 2009/1

Y1 - 2009/1

N2 - Temperature-dependent light-emitting and current-voltage characteristics of multiple-quantum well (MQW) InGaN/GaN blue LEDs were measured for temperature ranging from 100 to 500 K. The measurement results revealed two kinds of defects that have pronounced impact on the electroluminescent (EL) intensity and device reliability of the LEDs. At low-temperature (300 K), deep traps due to the structure dislocations at the interfaces significantly reduce the efficiency for radiative recombination though they can enhance both forward and reverse currents significantly. In addition, the significant enhancement of trap-assisted tunneling current causes a large heat dissipation and results in a large redshift of the emission peak at high temperature. © 2008 Elsevier Ltd. All rights reserved.

AB - Temperature-dependent light-emitting and current-voltage characteristics of multiple-quantum well (MQW) InGaN/GaN blue LEDs were measured for temperature ranging from 100 to 500 K. The measurement results revealed two kinds of defects that have pronounced impact on the electroluminescent (EL) intensity and device reliability of the LEDs. At low-temperature (300 K), deep traps due to the structure dislocations at the interfaces significantly reduce the efficiency for radiative recombination though they can enhance both forward and reverse currents significantly. In addition, the significant enhancement of trap-assisted tunneling current causes a large heat dissipation and results in a large redshift of the emission peak at high temperature. © 2008 Elsevier Ltd. All rights reserved.

UR - https://www.scopus.com/pages/publications/58149105446

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-58149105446&origin=recordpage

U2 - 10.1016/j.microrel.2008.10.002

DO - 10.1016/j.microrel.2008.10.002

M3 - RGC 21 - Publication in refereed journal

SN - 0026-2714

VL - 49

SP - 38

EP - 41

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 1

ER -

Temperature-dependent light-emitting characteristics of InGaN/GaN diodes

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