Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films

Zheng Wen; Xuan Shen; Jingxian Wu; Di Wu; Aidong Li; Bin Yang; Zhu Wang; Hengzhi Chen; Junling Wang

doi:10.1063/1.3432083

Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO₃ thin films

Zheng Wen, Xuan Shen, Jingxian Wu, Di Wu, Aidong Li, Bin Yang, Zhu Wang, Hengzhi Chen, Junling Wang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

30 Citations (Scopus)

Abstract

Leakage current characteristics of (Bi_0.86Pr_0.14) (Fe_0.95Mn_0.05) O₃ (BPFMO) thin films are studied at various temperatures from 293 down to 93 K. Space charge limited current and Poole-Frenkel (PF) emission are found to be the dominant mechanism in the low and the high electric fields, respectively. The trap ionization energy at zero-field in BPFMO films is deduced to be around 0.29 eV, which indicates the existence of shallow traps. A negative differential resistivity behavior is observed before the onset of PF emission at 93 K, which is discussed in terms of the competition between electron trapping and field-assisted thermal emission. © 2010 American Institute of Physics.

Original language	English
Article number	202904
Journal	Applied Physics Letters
Volume	96
Issue number	20
DOIs	https://doi.org/10.1063/1.3432083
Publication status	Published - 17 May 2010
Externally published	Yes

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@article{960f47ba49844bbab048c8d2f76dfc50,

title = "Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films",

abstract = "Leakage current characteristics of (Bi0.86Pr0.14) (Fe0.95Mn0.05) O3 (BPFMO) thin films are studied at various temperatures from 293 down to 93 K. Space charge limited current and Poole-Frenkel (PF) emission are found to be the dominant mechanism in the low and the high electric fields, respectively. The trap ionization energy at zero-field in BPFMO films is deduced to be around 0.29 eV, which indicates the existence of shallow traps. A negative differential resistivity behavior is observed before the onset of PF emission at 93 K, which is discussed in terms of the competition between electron trapping and field-assisted thermal emission. {\textcopyright} 2010 American Institute of Physics.",

author = "Zheng Wen and Xuan Shen and Jingxian Wu and Di Wu and Aidong Li and Bin Yang and Zhu Wang and Hengzhi Chen and Junling Wang",

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TY - JOUR

T1 - Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films

AU - Wen, Zheng

AU - Shen, Xuan

AU - Wu, Jingxian

AU - Wu, Di

AU - Li, Aidong

AU - Yang, Bin

AU - Wang, Zhu

AU - Chen, Hengzhi

AU - Wang, Junling

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2010/5/17

Y1 - 2010/5/17

N2 - Leakage current characteristics of (Bi0.86Pr0.14) (Fe0.95Mn0.05) O3 (BPFMO) thin films are studied at various temperatures from 293 down to 93 K. Space charge limited current and Poole-Frenkel (PF) emission are found to be the dominant mechanism in the low and the high electric fields, respectively. The trap ionization energy at zero-field in BPFMO films is deduced to be around 0.29 eV, which indicates the existence of shallow traps. A negative differential resistivity behavior is observed before the onset of PF emission at 93 K, which is discussed in terms of the competition between electron trapping and field-assisted thermal emission. © 2010 American Institute of Physics.

AB - Leakage current characteristics of (Bi0.86Pr0.14) (Fe0.95Mn0.05) O3 (BPFMO) thin films are studied at various temperatures from 293 down to 93 K. Space charge limited current and Poole-Frenkel (PF) emission are found to be the dominant mechanism in the low and the high electric fields, respectively. The trap ionization energy at zero-field in BPFMO films is deduced to be around 0.29 eV, which indicates the existence of shallow traps. A negative differential resistivity behavior is observed before the onset of PF emission at 93 K, which is discussed in terms of the competition between electron trapping and field-assisted thermal emission. © 2010 American Institute of Physics.

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U2 - 10.1063/1.3432083

DO - 10.1063/1.3432083

M3 - RGC 21 - Publication in refereed journal

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202904

ER -