Temperature dependent characteristics of graphene/silicon Schottky junction

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

2 Scopus Citations
View graph of relations


Related Research Unit(s)


Original languageEnglish
Pages (from-to)4-15
Journal / PublicationInternational Journal of Nanotechnology
Issue number1
Online published26 Aug 2020
Publication statusPublished - 2020


Title9th IEEE International Nanoelectronic Conference (INEC 2019)
Period3 - 5 July 2019


Graphene/silicon Schottky junction has been reported as a promising device for chemical sensor, biological sensor and photodetector applications. However, abnormal characteristics are often reported and these ambiguities are explained inconsistently in the literature. This work aims at characterising the temperature effects on the current-voltage characteristics so as to explore the physical mechanisms leading to the abnormal behaviours of graphene/silicon Schottky junction. Particular attention is on the effect of silicon surface states which have been studied quite comprehensively in various silicon devices but have not been given enough attention for the graphene/Si structure. Results show that a graphene/Si Schottky junction could have quite different temperature dependences on the barrier height, ideality factor and reverse characteristics as compared with metal/semiconductor contacts. The dangling bonds on silicon surface, isolated by the ultrathin graphene layer, are still electrically active and play an important role in the carrier transport, photonic and chemical sensing capabilities of the graphene/Si junction. Graphene/Si contact prepared by transfer method cannot be a good Schottky junction from the electronic property and stability points of view.

Research Area(s)

  • Graphene Schottky diode, Ideality factor, Interface trap, Surface bonding, Temperature dependence