Temperature dependency of the intrinsic carrier density of hydrogenated amorphous silicon in MOS structures

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

2 Scopus Citations
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Author(s)

  • W. R. Fahrner
  • G. Grabosch
  • D. Borchert
  • Y. Chan

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)245-250
Journal / PublicationJournal of Solid State Electrochemistry
Volume3
Issue number5
Publication statusPublished - 1999

Abstract

The admittance versus frequency of a hydrogenated amorphous silicon metal oxide semiconductor capacitor is measured at a fixed bias in inversion and for temperatures in the range of 20-50 °C. The data are fitted to theoretical capacitance and conductance curves where the time constant of inversion is the result of the fit. In turn, the time constant can be converted to the (minority) carrier lifetime so that a lifetime value for each measurement temperature is available. The conversion from the time constant to the minority carrier lifetime requires the knowledge of the temperature-dependent intrinsic carrier density or rather its activation energy. The criterion for the correct choice is a temperature-independent carrier lifetime. Three published room temperature values of the intrinsic carrier density have been tested. The carrier lifetime activation energy is Ea = 0.70 ± 0.03 eV.

Research Area(s)

  • Hydrogenated amorphous silicon, Intrinsic carrier density, Metal oxide semiconductor, Mos dispersion measurement

Citation Format(s)