Temperature dependency of the intrinsic carrier density of hydrogenated amorphous silicon in MOS structures
- W. R. Fahrner*
- , G. Grabosch
- , D. Borchert
- , Y. Chan
- , S. Kwong
- , K. Man
*Corresponding author for this work
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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