Temperature dependence of the fundamental band gap of InN

J. Wu; W. Walukiewicz; W. Shan; K. M. Yu; J. W. Ager III; S. X. Li; E. E. Haller; Hai Lu; William J. Schaff

doi:10.1063/1.1605815

Temperature dependence of the fundamental band gap of InN

J. Wu
, W. Walukiewicz^*
, W. Shan
, K. M. Yu
, J. W. Ager III
, S. X. Li
, E. E. Haller
, Hai Lu
, William J. Schaff

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

402 Citations (Scopus)

Abstract

The transmission and photoluminescence spectroscopy were used to find out temperature dependence of the fundamental band gap of InN films. Molecular beam epitaxy method was applied for growing InN films. The determination of the band gap energy was not possible by the energy of the photoluminescence peak. The article also discussed about the effects of degenerate doping on the optical properties indium compounds.

Original language	English
Pages (from-to)	4457-4460
Journal	Journal of Applied Physics
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.1605815
Publication status	Published - 1 Oct 2003
Externally published	Yes

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@article{e944028fedb147a4af0493a3ac0bd2fa,

title = "Temperature dependence of the fundamental band gap of InN",

abstract = "The transmission and photoluminescence spectroscopy were used to find out temperature dependence of the fundamental band gap of InN films. Molecular beam epitaxy method was applied for growing InN films. The determination of the band gap energy was not possible by the energy of the photoluminescence peak. The article also discussed about the effects of degenerate doping on the optical properties indium compounds.",

author = "J. Wu and W. Walukiewicz and W. Shan and Yu, \{K. M.\} and \{Ager III\}, \{J. W.\} and Li, \{S. X.\} and Haller, \{E. E.\} and Hai Lu and Schaff, \{William J.\}",

year = "2003",

month = oct,

day = "1",

doi = "10.1063/1.1605815",

language = "English",

volume = "94",

pages = "4457--4460",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Temperature dependence of the fundamental band gap of InN

AU - Wu, J.

AU - Walukiewicz, W.

AU - Shan, W.

AU - Yu, K. M.

AU - Ager III, J. W.

AU - Li, S. X.

AU - Haller, E. E.

AU - Lu, Hai

AU - Schaff, William J.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The transmission and photoluminescence spectroscopy were used to find out temperature dependence of the fundamental band gap of InN films. Molecular beam epitaxy method was applied for growing InN films. The determination of the band gap energy was not possible by the energy of the photoluminescence peak. The article also discussed about the effects of degenerate doping on the optical properties indium compounds.

AB - The transmission and photoluminescence spectroscopy were used to find out temperature dependence of the fundamental band gap of InN films. Molecular beam epitaxy method was applied for growing InN films. The determination of the band gap energy was not possible by the energy of the photoluminescence peak. The article also discussed about the effects of degenerate doping on the optical properties indium compounds.

UR - https://www.scopus.com/pages/publications/0142120866

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0142120866&origin=recordpage

U2 - 10.1063/1.1605815

DO - 10.1063/1.1605815

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 94

SP - 4457

EP - 4460

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Temperature dependence of the fundamental band gap of InN

Abstract

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