Temperature dependence of the fundamental band gap of InN

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • J. Wu
  • W. Walukiewicz
  • W. Shan
  • J. W. Ager III
  • S. X. Li
  • E. E. Haller
  • Hai Lu
  • William J. Schaff

Detail(s)

Original languageEnglish
Pages (from-to)4457-4460
Journal / PublicationJournal of Applied Physics
Volume94
Issue number7
Publication statusPublished - 1 Oct 2003
Externally publishedYes

Abstract

The transmission and photoluminescence spectroscopy were used to find out temperature dependence of the fundamental band gap of InN films. Molecular beam epitaxy method was applied for growing InN films. The determination of the band gap energy was not possible by the energy of the photoluminescence peak. The article also discussed about the effects of degenerate doping on the optical properties indium compounds.

Citation Format(s)

Temperature dependence of the fundamental band gap of InN. / Wu, J.; Walukiewicz, W.; Shan, W. et al.
In: Journal of Applied Physics, Vol. 94, No. 7, 01.10.2003, p. 4457-4460.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review