Temperature dependence of the band gap of GaSb1-xBix alloys with 0 <x ≤ 0.042 determined by photoreflectance

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • J. Kopaczek
  • R. Kudrawiec
  • W. M. Linhart
  • M. K. Rajpalke
  • T. S. Jones
  • M. J. Ashwin
  • J. Misiewicz
  • T. D. Veal

Detail(s)

Original languageEnglish
Article number261907
Journal / PublicationApplied Physics Letters
Volume103
Issue number26
Publication statusPublished - 23 Dec 2013
Externally publishedYes

Abstract

GaSb1-xBix layers with 0 <x ≤ 0.042 have been studied by photoreflectance in 15-290 K temperature range. We found that due to the incorporation of Bi atoms into the GaSb host, the E0 band gap-related transition redshifts (∼30 meV per 1% Bi) and significantly broadens. The shift of the E0 transition in the temperature range 10-270 K has been found to be ∼70 meV, very similar to the energy shift in GaSb over the same temperature range. We analyzed the energy and broadening of the E0 transition using the Varshni and Bose-Einstein formulas and found that the Varshni and Bose-Einstein parameters of GaSb1-xBi x are similar to those of GaSb. Moreover we concluded that the inhomogeneities in GaSb1-xBix alloys is less important than in dilute bismide arsenides since Bi atoms are more similar to Sb atoms (in electronegativities and ionic sizes). © 2013 AIP Publishing LLC.

Citation Format(s)

Temperature dependence of the band gap of GaSb1-xBix alloys with 0 <x ≤ 0.042 determined by photoreflectance. / Kopaczek, J.; Kudrawiec, R.; Linhart, W. M.; Rajpalke, M. K.; Yu, K. M.; Jones, T. S.; Ashwin, M. J.; Misiewicz, J.; Veal, T. D.

In: Applied Physics Letters, Vol. 103, No. 26, 261907, 23.12.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review