Temperature dependence of Si nanowire morphology

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • H. Y. Peng
  • Z. W. Pan
  • L. Xu
  • X. H. Fan
  • N. Wang
  • S. T. Lee

Detail(s)

Original languageEnglish
Pages (from-to)317-320
Journal / PublicationAdvanced Materials
Volume13
Issue number5
Publication statusPublished - 2 Mar 2001

Abstract

The effect of substrate temperature on the silicon nanowires was studied using transmission electron microscopy (TEM). An optical micrograph of Si nanowires was formed on the alumina substrate for different temperature ranges. Substrate temperature was found to be the critical factor for controlling the diameter of Si nanowires. The diameter of Si nanowires decreased with the decrease in growth temperature and the morphology changed from whiskers to wires. The morphology changed from nanowires to chain-like and tadpole-like nanorods with increase in substrate temperature.

Citation Format(s)

Temperature dependence of Si nanowire morphology. / Peng, H. Y.; Pan, Z. W.; Xu, L. et al.
In: Advanced Materials, Vol. 13, No. 5, 02.03.2001, p. 317-320.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review