TEM studies of as-grown, irradiated and annealed InN films

Z. Liliental-Weber; R. E. Jones; H. C. M. van Genuchten; K. M. Yu; W. Walukiewicz; J. W. Ager III; E. E. Haller; H. Lu; W. J. Schaff

doi:10.1016/j.physb.2007.09.042

TEM studies of as-grown, irradiated and annealed InN films

Z. Liliental-Weber^*, R. E. Jones, H. C. M. van Genuchten, K. M. Yu, W. Walukiewicz, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

7 Citations (Scopus)

Abstract

Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irradiation with 2 MeV He⁺ ions, and annealing after irradiation. Defects formed after each procedure were discussed. The results of these studies show that randomly distributed extended defects, formed upon irradiation, can come to uniform distribution throughout the samples upon annealing. An irradiation by 2 MeV He⁺ ions followed by thermal annealing at 425 and 475 °C leads to the unusual increase of the electron mobility of these films. Annealing at 500 °C led to the formation of In clusters and delamination of the film from the substrates.

Original language	English
Pages (from-to)	646-649
Journal	Physica B: Condensed Matter
Volume	401-402
DOIs	https://doi.org/10.1016/j.physb.2007.09.042
Publication status	Published - 15 Dec 2007
Externally published	Yes

Research Keywords

Annealing
Defects
InN
Irradiation
Transmission electron microscopy

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@article{6b4de2de39bd43648b617add5496aba7,

title = "TEM studies of as-grown, irradiated and annealed InN films",

abstract = "Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irradiation with 2 MeV He+ ions, and annealing after irradiation. Defects formed after each procedure were discussed. The results of these studies show that randomly distributed extended defects, formed upon irradiation, can come to uniform distribution throughout the samples upon annealing. An irradiation by 2 MeV He+ ions followed by thermal annealing at 425 and 475 °C leads to the unusual increase of the electron mobility of these films. Annealing at 500 °C led to the formation of In clusters and delamination of the film from the substrates.",

keywords = "Annealing, Defects, InN, Irradiation, Transmission electron microscopy",

author = "Z. Liliental-Weber and Jones, {R. E.} and {van Genuchten}, {H. C. M.} and Yu, {K. M.} and W. Walukiewicz and {Ager III}, {J. W.} and Haller, {E. E.} and H. Lu and Schaff, {W. J.}",

year = "2007",

month = dec,

day = "15",

doi = "10.1016/j.physb.2007.09.042",

language = "English",

volume = "401-402",

pages = "646--649",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - TEM studies of as-grown, irradiated and annealed InN films

AU - Liliental-Weber, Z.

AU - Jones, R. E.

AU - van Genuchten, H. C. M.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Ager III, J. W.

AU - Haller, E. E.

AU - Lu, H.

AU - Schaff, W. J.

PY - 2007/12/15

Y1 - 2007/12/15

N2 - Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irradiation with 2 MeV He+ ions, and annealing after irradiation. Defects formed after each procedure were discussed. The results of these studies show that randomly distributed extended defects, formed upon irradiation, can come to uniform distribution throughout the samples upon annealing. An irradiation by 2 MeV He+ ions followed by thermal annealing at 425 and 475 °C leads to the unusual increase of the electron mobility of these films. Annealing at 500 °C led to the formation of In clusters and delamination of the film from the substrates.

AB - Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irradiation with 2 MeV He+ ions, and annealing after irradiation. Defects formed after each procedure were discussed. The results of these studies show that randomly distributed extended defects, formed upon irradiation, can come to uniform distribution throughout the samples upon annealing. An irradiation by 2 MeV He+ ions followed by thermal annealing at 425 and 475 °C leads to the unusual increase of the electron mobility of these films. Annealing at 500 °C led to the formation of In clusters and delamination of the film from the substrates.

KW - Annealing

KW - Defects

KW - InN

KW - Irradiation

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=36048992119&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-36048992119&origin=recordpage

U2 - 10.1016/j.physb.2007.09.042

DO - 10.1016/j.physb.2007.09.042

M3 - RGC 21 - Publication in refereed journal

SN - 0921-4526

VL - 401-402

SP - 646

EP - 649

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

TEM studies of as-grown, irradiated and annealed InN films

Abstract

Research Keywords

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