TEM investigations of the tungsten silicide films on silicon

Tungsten silicide thin films were prepared by electron beam evaporation techniques. Tungsten films of 900°A thick were evaporated onto the silicon substrates. The as-deposited films were subsequently annealed in a quartz diffusion furnace under an N₂ atmosphere. X-ray diffraction and transmission electron microscopy were used to determine the structure of the annealed thin films. Grain coarsening and epitaxial silicides were observed on the as-deposited tungsten film on (100) silicon after furnace annealing at 800°C for 1 hour. © 1987.