Tellurium n-type doping of highly mismatched amorphous GaN1-xAsalloys in plasma-assisted molecular beam epitaxy

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

3 Scopus Citations
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Author(s)

  • S.V. Novikov
  • M. Ting
  • W.L. Sarney
  • R.W. Martin
  • S.P. Svensson
  • W. Walukiewicz
  • C.T. Foxon

Detail(s)

Original languageEnglish
Pages (from-to)9-13
Journal / PublicationJournal of Crystal Growth
Volume404
Publication statusPublished - 2014
Externally publishedYes

Abstract

In this paper we report our study on n-type Te doping of amorphous GaN1-xAslayers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAslayers has been successfully achieved with a maximum Te concentration of 9 × 1020 cm-3. Tellurium incorporation resulted in n-doping of GaN1-xAslayers with Hall carrier concentrations up to 3 × 1019 cm-3and mobilities of ~1 cm2/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAslayers has been determined.

Research Area(s)

  • A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials

Citation Format(s)

Tellurium n-type doping of highly mismatched amorphous GaN1-xAsalloys in plasma-assisted molecular beam epitaxy. / Novikov, S.V.; Ting, M.; Yu, K.M. et al.
In: Journal of Crystal Growth, Vol. 404, 2014, p. 9-13.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review