Tellurium n-type doping of highly mismatched amorphous GaN1-xAsxalloys in plasma-assisted molecular beam epitaxy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • S. V. Novikov
  • M. Ting
  • W. L. Sarney
  • R. W. Martin
  • S. P. Svensson
  • W. Walukiewicz
  • C. T. Foxon

Detail(s)

Original languageEnglish
Pages (from-to)9-13
Journal / PublicationJournal of Crystal Growth
Volume404
Publication statusPublished - 2014
Externally publishedYes

Abstract

In this paper we report our study on n-type Te doping of amorphous GaN1-xAsxlayers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsxlayers has been successfully achieved with a maximum Te concentration of 9×1020cm-3. Tellurium incorporation resulted in n-doping of GaN1-xAsxlayers with Hall carrier concentrations up to 3×1019cm-3and mobilities of ~1 cm2/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsxlayers has been determined.

Research Area(s)

  • A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials

Citation Format(s)

Tellurium n-type doping of highly mismatched amorphous GaN1-xAsxalloys in plasma-assisted molecular beam epitaxy. / Novikov, S. V.; Ting, M.; Yu, K. M.; Sarney, W. L.; Martin, R. W.; Svensson, S. P.; Walukiewicz, W.; Foxon, C. T.

In: Journal of Crystal Growth, Vol. 404, 2014, p. 9-13.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review