Technique for the large-signal characterization of transistors

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)516-517
Journal / PublicationMicrowave and Optical Technology Letters
Volume5
Issue number10
Publication statusPublished - Sept 1992

Link(s)

DOI

DOI
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Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0026924265&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(94a567da-97e4-4c3d-9a33-70d2a71356ad).html

Abstract

A novel method for the characterization of transistors operating in the nonlinear region has been developed. A new measurement method is proposed and the formulation for the characterization has been developed. Calculated results based on the proposed method are promising when compared to measured data.

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Publication fingerprints text

100
Transistor Keyphrases
100
Large-signal Charac... Keyphrases
100
signals INIS
100
transistors INIS
100
Characterization Material Science
50
Result-oriented Keyphrases
50
New Measurement Met... Keyphrases
50
Nonlinear Region Keyphrases
50
comparative evaluat... INIS
50
data INIS
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Citation Format(s)

[ RIS ] [ BibTeX ]
Technique for the large-signal characterization of transistors. / Tsang, Kim Fung; Yip, Peter C L; Morgan, Gwyn B.
In: Microwave and Optical Technology Letters, Vol. 5, No. 10, 09.1992, p. 516-517.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review