Abstract
The newly developed inverted tapping-mode tuning-fork near-field scanning optical microscopy (TMTF-NSOM) is used to study the local near-field optical properties of strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diodes. In contrast to shear-force mode NSOM, TMTF-NSOM provides the function to acquire the evanescent wave intensity ratio |I(2ω)|/|I(ω)| image, from which the evanescent wave decay coefficient q can be evaluated for a known tapping amplitude. Moreover, we probe the near-field stimulated emission spectrum, which gives the free-space laser light wavelength λO and the index of refraction nr of the laser diode resonant cavity. Once q, λO, and nr are all measured, we can determine the angle of incidence θO of the dominant totally internally reflected waves incident on the front mirror facet of the resonator. Determination of such an angle is very important in modelling the stability of the laser diode resonator.
| Original language | English |
|---|---|
| Pages (from-to) | 172-175 |
| Journal | Journal of Microscopy |
| Volume | 202 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Research Keywords
- Evanescent waves
- Near-field scanning optical microscopy
- Semiconductor laser
- Tapping-mode