Synthesis of Zr Doped NiO Layers on NiSi2/Si-MCP Structures for Supercapacitors

Linling Gu; Tao Liu; Fei Wang; Shaohui Xu; Lianwei Wang; Paul K Chu

Synthesis of Zr Doped NiO Layers on NiSi₂/Si-MCP Structures for Supercapacitors

Linling Gu
, Tao Liu
, Fei Wang
, Shaohui Xu
, Lianwei Wang
, Paul K Chu

Research output: Conference Papers › RGC 32 - Refereed conference paper (without host publication) › peer-review

Abstract

Three-dimensional supercapacitors consisting of NiSi₂/silicon microchannel plates (MCPs) with Zr doped NiO layers have been fabricated. The silicon MCPs produced by electrochemical etching is utilized as a backbone of the 3D structure. Nickle layer was deposited on silicon MCP by electroless chemical deposition. The active Zr doped NiO film and NiSi₂ layer are synthesized on the surface of the Si-MCP by annealing the backbone coated by a Zr doped nickel layer under oxygen at 500°C. The multi-layered electrode materials are characterized by field emission scanning electron microscopy (FESEM) and the electrochemical properties are determined by cyclic voltammetry (CV). In addition, the electrochemical properties of the NiSi₂/silicon MCP structure with pure NiO layers and the NiSi₂/silicon MCP structure with Zr doped NiO layers are compared.

Original language	English
Publication status	Published - Apr 2012
Event	2nd international Conference on Electric Information and Control Engineering (ICEICE 2012) - Lushan, China Duration: 6 Apr 2012 → 8 Apr 2012

Conference

Conference	2nd international Conference on Electric Information and Control Engineering (ICEICE 2012)
Abbreviated title	ICEICE 2012
Place	China
City	Lushan
Period	6/04/12 → 8/04/12

Research Keywords

Zr doped NiO
Electrochemical properties
Silicon microchannel plate

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http://www.cityu.edu.hk/phy/appkchu/Publications/2012/12.C27.pdf

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Cite this

@conference{31a647cf43ee415b98641d09d5624406,

title = "Synthesis of Zr Doped NiO Layers on NiSi2/Si-MCP Structures for Supercapacitors",

abstract = "Three-dimensional supercapacitors consisting of NiSi2/silicon microchannel plates (MCPs) with Zr doped NiO layers have been fabricated. The silicon MCPs produced by electrochemical etching is utilized as a backbone of the 3D structure. Nickle layer was deposited on silicon MCP by electroless chemical deposition. The active Zr doped NiO film and NiSi2 layer are synthesized on the surface of the Si-MCP by annealing the backbone coated by a Zr doped nickel layer under oxygen at 500°C. The multi-layered electrode materials are characterized by field emission scanning electron microscopy (FESEM) and the electrochemical properties are determined by cyclic voltammetry (CV). In addition, the electrochemical properties of the NiSi2/silicon MCP structure with pure NiO layers and the NiSi2/silicon MCP structure with Zr doped NiO layers are compared. ",

keywords = "Zr doped NiO, Electrochemical properties, Silicon microchannel plate",

author = "Linling Gu and Tao Liu and Fei Wang and Shaohui Xu and Lianwei Wang and Chu, \{Paul K\}",

year = "2012",

month = apr,

language = "English",

note = "2nd international Conference on Electric Information and Control Engineering (ICEICE 2012), ICEICE 2012 ; Conference date: 06-04-2012 Through 08-04-2012",

}

Synthesis of Zr Doped NiO Layers on NiSi₂/Si-MCP Structures for Supercapacitors. / Gu, Linling; Liu, Tao; Wang, Fei et al.
2012. Paper presented at 2nd international Conference on Electric Information and Control Engineering (ICEICE 2012), Lushan, China.

Research output: Conference Papers › RGC 32 - Refereed conference paper (without host publication) › peer-review

TY - CONF

T1 - Synthesis of Zr Doped NiO Layers on NiSi2/Si-MCP Structures for Supercapacitors

AU - Gu, Linling

AU - Liu, Tao

AU - Wang, Fei

AU - Xu, Shaohui

AU - Wang, Lianwei

AU - Chu, Paul K

PY - 2012/4

Y1 - 2012/4

N2 - Three-dimensional supercapacitors consisting of NiSi2/silicon microchannel plates (MCPs) with Zr doped NiO layers have been fabricated. The silicon MCPs produced by electrochemical etching is utilized as a backbone of the 3D structure. Nickle layer was deposited on silicon MCP by electroless chemical deposition. The active Zr doped NiO film and NiSi2 layer are synthesized on the surface of the Si-MCP by annealing the backbone coated by a Zr doped nickel layer under oxygen at 500°C. The multi-layered electrode materials are characterized by field emission scanning electron microscopy (FESEM) and the electrochemical properties are determined by cyclic voltammetry (CV). In addition, the electrochemical properties of the NiSi2/silicon MCP structure with pure NiO layers and the NiSi2/silicon MCP structure with Zr doped NiO layers are compared.

AB - Three-dimensional supercapacitors consisting of NiSi2/silicon microchannel plates (MCPs) with Zr doped NiO layers have been fabricated. The silicon MCPs produced by electrochemical etching is utilized as a backbone of the 3D structure. Nickle layer was deposited on silicon MCP by electroless chemical deposition. The active Zr doped NiO film and NiSi2 layer are synthesized on the surface of the Si-MCP by annealing the backbone coated by a Zr doped nickel layer under oxygen at 500°C. The multi-layered electrode materials are characterized by field emission scanning electron microscopy (FESEM) and the electrochemical properties are determined by cyclic voltammetry (CV). In addition, the electrochemical properties of the NiSi2/silicon MCP structure with pure NiO layers and the NiSi2/silicon MCP structure with Zr doped NiO layers are compared.

KW - Zr doped NiO

KW - Electrochemical properties

KW - Silicon microchannel plate

M3 - RGC 32 - Refereed conference paper (without host publication)

T2 - 2nd international Conference on Electric Information and Control Engineering (ICEICE 2012)

Y2 - 6 April 2012 through 8 April 2012

ER -