Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

Pei-Yang Gu; Junkuo Gao; Cai-Jian Lu; Wangqiao Chen; Chengyuan Wang; Gang Li; Feng Zhou; Qing-Feng Xu; Jian-Mei Lu; Qichun Zhang

doi:10.1039/c4mh00022f

Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

Pei-Yang Gu
, Junkuo Gao
, Cai-Jian Lu
, Wangqiao Chen
, Chengyuan Wang
, Gang Li
, Feng Zhou
, Qing-Feng Xu^*
, Jian-Mei Lu^*
, Qichun Zhang^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

56 Citations (Scopus)

Abstract

To achieve ultra-high density memory devices with a capacity of 3ⁿ or larger, a novel larger and stable oxacalix[4]arene, 4N4OPz, is reported. 4N4OPz exhibited excellent ternary memory behavior with high ON2/ON1/OFF current ratios of 10^8.7/10^4.2/1, low switching threshold voltage of -1.80 V/-2.87 V, and good stability for these three states.

Original language	English
Pages (from-to)	446-451
Journal	Materials Horizons
Volume	1
Issue number	4
Online published	16 Apr 2014
DOIs	https://doi.org/10.1039/c4mh00022f
Publication status	Published - 1 Jul 2014
Externally published	Yes

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@article{137b64765c4140ac81a946b21c483f93,

title = "Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance",

abstract = "To achieve ultra-high density memory devices with a capacity of 3n or larger, a novel larger and stable oxacalix[4]arene, 4N4OPz, is reported. 4N4OPz exhibited excellent ternary memory behavior with high ON2/ON1/OFF current ratios of 108.7/104.2/1, low switching threshold voltage of -1.80 V/-2.87 V, and good stability for these three states.",

author = "Pei-Yang Gu and Junkuo Gao and Cai-Jian Lu and Wangqiao Chen and Chengyuan Wang and Gang Li and Feng Zhou and Qing-Feng Xu and Jian-Mei Lu and Qichun Zhang",

year = "2014",

month = jul,

day = "1",

doi = "10.1039/c4mh00022f",

language = "English",

volume = "1",

pages = "446--451",

journal = "Materials Horizons",

issn = "2051-6347",

publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

AU - Gu, Pei-Yang

AU - Gao, Junkuo

AU - Lu, Cai-Jian

AU - Chen, Wangqiao

AU - Wang, Chengyuan

AU - Li, Gang

AU - Zhou, Feng

AU - Xu, Qing-Feng

AU - Lu, Jian-Mei

AU - Zhang, Qichun

PY - 2014/7/1

Y1 - 2014/7/1

N2 - To achieve ultra-high density memory devices with a capacity of 3n or larger, a novel larger and stable oxacalix[4]arene, 4N4OPz, is reported. 4N4OPz exhibited excellent ternary memory behavior with high ON2/ON1/OFF current ratios of 108.7/104.2/1, low switching threshold voltage of -1.80 V/-2.87 V, and good stability for these three states.

AB - To achieve ultra-high density memory devices with a capacity of 3n or larger, a novel larger and stable oxacalix[4]arene, 4N4OPz, is reported. 4N4OPz exhibited excellent ternary memory behavior with high ON2/ON1/OFF current ratios of 108.7/104.2/1, low switching threshold voltage of -1.80 V/-2.87 V, and good stability for these three states.

UR - https://www.scopus.com/pages/publications/84925363866

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84925363866&origin=recordpage

U2 - 10.1039/c4mh00022f

DO - 10.1039/c4mh00022f

M3 - RGC 21 - Publication in refereed journal

SN - 2051-6347

VL - 1

SP - 446

EP - 451

JO - Materials Horizons

JF - Materials Horizons

IS - 4

ER -

Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

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