Synthesis of taperlike Si nanowires with strong field emission

Y. L. Chueh; L. J. Chou; S. L. Cheng; J. H. He; W. W. Wu; L. J. Chen

doi:10.1063/1.1883316

Synthesis of taperlike Si nanowires with strong field emission

Y. L. Chueh, L. J. Chou^*, S. L. Cheng, J. H. He, W. W. Wu, L. J. Chen

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

86 Citations (Scopus)

Abstract

Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi₂ nanodots on (001)Si at 1200 °C in a N₂ ambient. The tip regions of SiNWs are about 5-10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO₂ coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 V/μm and a threshold field of 9-10 V/μm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires. © 2005 American Institute of Physics.

Original language	English
Article number	133112
Pages (from-to)	1-3
Journal	Applied Physics Letters
Volume	86
Issue number	13
Online published	24 Mar 2005
DOIs	https://doi.org/10.1063/1.1883316
Publication status	Published - 28 Mar 2005
Externally published	Yes

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title = "Synthesis of taperlike Si nanowires with strong field emission",

abstract = "Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001)Si at 1200 °C in a N2 ambient. The tip regions of SiNWs are about 5-10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 V/μm and a threshold field of 9-10 V/μm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires. {\textcopyright} 2005 American Institute of Physics.",

author = "Chueh, {Y. L.} and Chou, {L. J.} and Cheng, {S. L.} and He, {J. H.} and Wu, {W. W.} and Chen, {L. J.}",

year = "2005",

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doi = "10.1063/1.1883316",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Synthesis of taperlike Si nanowires with strong field emission

AU - Chueh, Y. L.

AU - Chou, L. J.

AU - Cheng, S. L.

AU - He, J. H.

AU - Wu, W. W.

AU - Chen, L. J.

PY - 2005/3/28

Y1 - 2005/3/28

N2 - Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001)Si at 1200 °C in a N2 ambient. The tip regions of SiNWs are about 5-10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 V/μm and a threshold field of 9-10 V/μm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires. © 2005 American Institute of Physics.

AB - Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001)Si at 1200 °C in a N2 ambient. The tip regions of SiNWs are about 5-10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150-170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3-7.3 V/μm and a threshold field of 9-10 V/μm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires. © 2005 American Institute of Physics.

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DO - 10.1063/1.1883316

M3 - RGC 21 - Publication in refereed journal

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VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133112

ER -

Synthesis of taperlike Si nanowires with strong field emission

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