Synthesis of semiconductor nanowires by annealing

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)1802-1804
Journal / PublicationApplied Physics Letters
Volume85
Issue number10
Publication statusPublished - 6 Sep 2004
Externally publishedYes

Abstract

The synthesis of semiconductor nanowires such as InAs, InP, InP, β-Ga2O3, and GaP by annealing semiconductor wafers covered with Au film at 550° - 650°C in a N2 atmosphere was analyzed. The composition of the obtained semiconductor nanowires was determined by substrate and chemical conditions of growth. High degrees of crystallization of the as-grown nanowires was revealed by high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). The results show that by using doped semiconductor wafers as substrates as the annealing atmosphere, some predicted doping semiconductor nanowires can be synthesized.

Citation Format(s)

Synthesis of semiconductor nanowires by annealing. / Zhi, C. Y.; Bai, X. D.; Wang, E. G.

In: Applied Physics Letters, Vol. 85, No. 10, 06.09.2004, p. 1802-1804.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review