Synthesis of semiconductor nanowires by annealing

C. Y. Zhi; X. D. Bai; E. G. Wang

doi:10.1063/1.1786374

Synthesis of semiconductor nanowires by annealing

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Overview

18 Scopus Citations

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Author(s)

C. Y. Zhi
X. D. Bai
E. G. Wang

Detail(s)

Original language	English
Pages (from-to)	1802-1804
Journal / Publication	Applied Physics Letters
Volume	85
Issue number	10
Publication status	Published - 6 Sept 2004
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.1786374 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-4944233077&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(872c3b0f-da2e-4a2b-9c49-7fd759496c5e).html

Abstract

The synthesis of semiconductor nanowires such as InAs, InP, InP, β-Ga₂O₃, and GaP by annealing semiconductor wafers covered with Au film at 550° - 650°C in a N₂ atmosphere was analyzed. The composition of the obtained semiconductor nanowires was determined by substrate and chemical conditions of growth. High degrees of crystallization of the as-grown nanowires was revealed by high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). The results show that by using doped semiconductor wafers as substrates as the annealing atmosphere, some predicted doping semiconductor nanowires can be synthesized.