Synthesis of large areas of highly oriented, very long silicon nanowires

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Wen-Sheng Shi
  • Hong-Ying Peng
  • Yu-Feng Zheng
  • Ning Wang
  • Nai-Gui Shang
  • Zhen-Wei Pan
  • Shuit-Tong Lee

Detail(s)

Original languageEnglish
Pages (from-to)1343-1345
Journal / PublicationAdvanced Materials
Volume12
Issue number18
Publication statusPublished - 15 Sept 2000

Abstract

The synthesis of highly oriented, large scale, and very long silicon nanowires on flat silicon substrates by thermal evaporation of silicon monoxide is reported. The growth mechanism and optical properties of the oriented silicon nanowires are also discussed. The growth area of the oriented silicon nanowires characterized by scanning electron microscopy was about 2 mm×3 mm. The thickness of the nanowire product was about 10 μm. Transmission electron microscopy revealed that oriented silicon nanowires consisted of crystalline silicon cores covered by amorphous silicon oxide sheaths.

Citation Format(s)

Synthesis of large areas of highly oriented, very long silicon nanowires. / Shi, Wen-Sheng; Peng, Hong-Ying; Zheng, Yu-Feng et al.
In: Advanced Materials, Vol. 12, No. 18, 15.09.2000, p. 1343-1345.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review