Synthesis of InNxP1-x thin films by N ion implantation

K. M. Yu; W. Walukiewicz; J. Wu; J. W. Beeman; J. W. Ager III; E. E. Haller; W. Shan; H. P. Xin; C. W. Tu

doi:10.1063/1.1350963

Synthesis of InNxP1-x thin films by N ion implantation

K. M. Yu, W. Walukiewicz, J. Wu, J. W. Beeman, J. W. Ager III, E. E. Haller, W. Shan, H. P. Xin, C. W. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

Dilute InN_xP_1-x alloy thin films were synthesized by nitrogen ion implantation into InP using doses corresponding to N mole fraction up to 0.048. In the films with the highest N contents, it was shown using modulated photoreflectance that the fundamental band gap energy was decreased by up to 180 meV. The band gap reduction is similar in magnitude to that observed in epitaxially grown III-N_xV_1-x alloys. The InN_xP_1-x layers were thermally stable up to an annealing temperature of 850°C. Using the recently developed band anticrossing model which relates the band gap reduction to the N content, we estimate that the maximum mole fraction of N achieved in the InN_xP_1-x alloys is larger than that reported previously for film grown by chemical vapor deposition and exceeds 0.01. © 2001 American Institute of Physics.

Original language	English
Pages (from-to)	1077-1079
Journal	Applied Physics Letters
Volume	78
Issue number	8
DOIs	https://doi.org/10.1063/1.1350963
Publication status	Published - 19 Feb 2001
Externally published	Yes

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title = "Synthesis of InNxP1-x thin films by N ion implantation",

abstract = "Dilute InNxP1-x alloy thin films were synthesized by nitrogen ion implantation into InP using doses corresponding to N mole fraction up to 0.048. In the films with the highest N contents, it was shown using modulated photoreflectance that the fundamental band gap energy was decreased by up to 180 meV. The band gap reduction is similar in magnitude to that observed in epitaxially grown III-NxV1-x alloys. The InNxP1-x layers were thermally stable up to an annealing temperature of 850°C. Using the recently developed band anticrossing model which relates the band gap reduction to the N content, we estimate that the maximum mole fraction of N achieved in the InNxP1-x alloys is larger than that reported previously for film grown by chemical vapor deposition and exceeds 0.01. {\textcopyright} 2001 American Institute of Physics.",

author = "Yu, {K. M.} and W. Walukiewicz and J. Wu and Beeman, {J. W.} and {Ager III}, {J. W.} and Haller, {E. E.} and W. Shan and Xin, {H. P.} and Tu, {C. W.}",

year = "2001",

month = feb,

day = "19",

doi = "10.1063/1.1350963",

language = "English",

volume = "78",

pages = "1077--1079",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Synthesis of InNxP1-x thin films by N ion implantation

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Wu, J.

AU - Beeman, J. W.

AU - Ager III, J. W.

AU - Haller, E. E.

AU - Shan, W.

AU - Xin, H. P.

AU - Tu, C. W.

PY - 2001/2/19

Y1 - 2001/2/19

N2 - Dilute InNxP1-x alloy thin films were synthesized by nitrogen ion implantation into InP using doses corresponding to N mole fraction up to 0.048. In the films with the highest N contents, it was shown using modulated photoreflectance that the fundamental band gap energy was decreased by up to 180 meV. The band gap reduction is similar in magnitude to that observed in epitaxially grown III-NxV1-x alloys. The InNxP1-x layers were thermally stable up to an annealing temperature of 850°C. Using the recently developed band anticrossing model which relates the band gap reduction to the N content, we estimate that the maximum mole fraction of N achieved in the InNxP1-x alloys is larger than that reported previously for film grown by chemical vapor deposition and exceeds 0.01. © 2001 American Institute of Physics.

AB - Dilute InNxP1-x alloy thin films were synthesized by nitrogen ion implantation into InP using doses corresponding to N mole fraction up to 0.048. In the films with the highest N contents, it was shown using modulated photoreflectance that the fundamental band gap energy was decreased by up to 180 meV. The band gap reduction is similar in magnitude to that observed in epitaxially grown III-NxV1-x alloys. The InNxP1-x layers were thermally stable up to an annealing temperature of 850°C. Using the recently developed band anticrossing model which relates the band gap reduction to the N content, we estimate that the maximum mole fraction of N achieved in the InNxP1-x alloys is larger than that reported previously for film grown by chemical vapor deposition and exceeds 0.01. © 2001 American Institute of Physics.

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U2 - 10.1063/1.1350963

DO - 10.1063/1.1350963

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 78

SP - 1077

EP - 1079

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Synthesis of InNxP1-x thin films by N ion implantation

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