Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

K. M. Yu; W. Walukiewicz; W. Shan; J. Wu; J. W. Beeman; J. W. Ager; E. E. Haller; M. C. Ridgway

doi:10.1557/PROC-650-R8.3/O13.3

Synthesis of III-N_x-V_1-x Thin Films by N Ion Implantation

K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, J. W. Beeman, J. W. Ager, E. E. Haller, M. C. Ridgway

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Dilute III-N_x-V_1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-N_x-V_1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaN_xAs_1-x and InN_xP_1-x thin films. The fraction of N occupying anion sites ("active" N) in the GaN_xAs_1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InN_xP_1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

Original language	English
Title of host publication	MRS Proceedings
Publisher	Cambridge University Press
Volume	650
ISBN (Electronic)	1946-4274
DOIs	https://doi.org/10.1557/PROC-650-R8.3/O13.3
Publication status	Published - 2000
Externally published	Yes
Event	2000 Materials Research Society Fall Meeting - Boston, United States Duration: 27 Nov 2000 → 1 Dec 2000 https://www.cambridge.org/core/journals/mrs-bulletin/article/preview-2000-mrs-fall-meeting/540815A9DCE6E99CB1EDD204B9EFC4F5

Meeting

Meeting	2000 Materials Research Society Fall Meeting
Place	United States
City	Boston
Period	27/11/00 → 1/12/00
Internet address	https://www.cambridge.org/core/journals/mrs-bulletin/article/preview-2000-mrs-fall-meeting/540815A9DCE6E99CB1EDD204B9EFC4F5

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@inproceedings{680369d000374d4f82440debb1fd6075,

title = "Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation",

abstract = "Dilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-x thin films. The fraction of N occupying anion sites ({"}active{"} N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.",

author = "Yu, {K. M.} and W. Walukiewicz and W. Shan and J. Wu and Beeman, {J. W.} and Ager, {J. W.} and Haller, {E. E.} and Ridgway, {M. C.}",

year = "2000",

doi = "10.1557/PROC-650-R8.3/O13.3",

language = "English",

volume = "650",

booktitle = "MRS Proceedings",

publisher = "Cambridge University Press",

address = "United Kingdom",

note = "2000 Materials Research Society Fall Meeting ; Conference date: 27-11-2000 Through 01-12-2000",

url = "https://www.cambridge.org/core/journals/mrs-bulletin/article/preview-2000-mrs-fall-meeting/540815A9DCE6E99CB1EDD204B9EFC4F5",

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TY - GEN

T1 - Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Shan, W.

AU - Wu, J.

AU - Beeman, J. W.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Ridgway, M. C.

PY - 2000

Y1 - 2000

N2 - Dilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-x thin films. The fraction of N occupying anion sites ("active" N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

AB - Dilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-x thin films. The fraction of N occupying anion sites ("active" N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

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U2 - 10.1557/PROC-650-R8.3/O13.3

DO - 10.1557/PROC-650-R8.3/O13.3

M3 - RGC 32 - Refereed conference paper (with host publication)

VL - 650

BT - MRS Proceedings

PB - Cambridge University Press

T2 - 2000 Materials Research Society Fall Meeting

Y2 - 27 November 2000 through 1 December 2000

ER -