Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors

Zenghui Wu; Yuxuan Zhang; Boxiang Gao; You Meng; He Shao; Dengji Li; Pengshan Xie; Weijun Wang; Bowen Li; Chenxu Zhang; Yi Shen; Di Yin; Dong Chen; Quan Quan; SenPo Yip; Johnny C. Ho

doi:10.1038/s41467-025-60038-3

Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors

Zenghui Wu
, Yuxuan Zhang
, Boxiang Gao
, You Meng
, He Shao
, Dengji Li
, Pengshan Xie
, Weijun Wang
, Bowen Li
, Chenxu Zhang
, Yi Shen
, Di Yin
, Dong Chen
, Quan Quan
, SenPo Yip
, Johnny C. Ho^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

11 Citations (Scopus)

11 Downloads (CityUHK Scholars)

Abstract

Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere. We successfully fabricated h-BAs-based memory devices with ON/OFF current ratios up to 10⁹, low energy consumption of less than 4.65 pJ, and commendable stability. Furthermore, we have developed flexible h-BAs-based memristors with good stability and robustness. This research not only provides a promising avenue for synthesizing h-BAs nanosheets, but also underscores their potential in the development of next-generation electronic devices. © The Author(s) 2025.

Original language	English
Article number	4755
Journal	Nature Communications
Volume	16
Online published	22 May 2025
DOIs	https://doi.org/10.1038/s41467-025-60038-3
Publication status	Published - 2025

Funding

This work is supported by a fellowship award from the Research Grants Council of the Hong Kong Special Administrative Region, China (CityURFS2021-1S04), the Innovation and Technology Fund (MHP/044/23) from the Innovation and Technology Commission of the Hong Kong Special Administrative Region, China, the Science Technology and Innovation Committee of Shenzhen Municipality (Project No. JCYJ20230807114910021), and Guangdong Basic and Applied Basic Research Fund (Project no. 2024A1515011922).

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This full text is made available under CC-BY-NC-ND 4.0. https://creativecommons.org/licenses/by-nc-nd/4.0/

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@article{9afee275b141416caa5998602895602c,

title = "Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors",

abstract = "Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere. We successfully fabricated h-BAs-based memory devices with ON/OFF current ratios up to 109, low energy consumption of less than 4.65 pJ, and commendable stability. Furthermore, we have developed flexible h-BAs-based memristors with good stability and robustness. This research not only provides a promising avenue for synthesizing h-BAs nanosheets, but also underscores their potential in the development of next-generation electronic devices. {\textcopyright} The Author(s) 2025.",

author = "Zenghui Wu and Yuxuan Zhang and Boxiang Gao and You Meng and He Shao and Dengji Li and Pengshan Xie and Weijun Wang and Bowen Li and Chenxu Zhang and Yi Shen and Di Yin and Dong Chen and Quan Quan and SenPo Yip and Ho, \{Johnny C.\}",

year = "2025",

doi = "10.1038/s41467-025-60038-3",

language = "English",

volume = "16",

journal = "Nature Communications",

issn = "2041-1723",

publisher = "Springer Nature",

}

TY - JOUR

T1 - Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors

AU - Wu, Zenghui

AU - Zhang, Yuxuan

AU - Gao, Boxiang

AU - Meng, You

AU - Shao, He

AU - Li, Dengji

AU - Xie, Pengshan

AU - Wang, Weijun

AU - Li, Bowen

AU - Zhang, Chenxu

AU - Shen, Yi

AU - Yin, Di

AU - Chen, Dong

AU - Quan, Quan

AU - Yip, SenPo

AU - Ho, Johnny C.

PY - 2025

Y1 - 2025

N2 - Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere. We successfully fabricated h-BAs-based memory devices with ON/OFF current ratios up to 109, low energy consumption of less than 4.65 pJ, and commendable stability. Furthermore, we have developed flexible h-BAs-based memristors with good stability and robustness. This research not only provides a promising avenue for synthesizing h-BAs nanosheets, but also underscores their potential in the development of next-generation electronic devices. © The Author(s) 2025.

AB - Boron arsenide has recently attracted significant attention for its thermal and electronic properties. However, its lengthy growth process and bulk structure limit its application in advanced semiconductor systems. In this study, we introduce a method for synthesizing ultrathin crystalline hexagonal boron arsenide (h-BAs) nanosheets in large quantities via an in-situ chemical reaction of sodium borohydride with elemental arsenic in a low-pressure hydrogen atmosphere. We successfully fabricated h-BAs-based memory devices with ON/OFF current ratios up to 109, low energy consumption of less than 4.65 pJ, and commendable stability. Furthermore, we have developed flexible h-BAs-based memristors with good stability and robustness. This research not only provides a promising avenue for synthesizing h-BAs nanosheets, but also underscores their potential in the development of next-generation electronic devices. © The Author(s) 2025.

UR - https://www.scopus.com/pages/publications/105005807056

UR - https://www.scopus.com/pages/publications/105005807056#tab=impact

U2 - 10.1038/s41467-025-60038-3

DO - 10.1038/s41467-025-60038-3

M3 - RGC 21 - Publication in refereed journal

C2 - 40404659

SN - 2041-1723

VL - 16

JO - Nature Communications

JF - Nature Communications

M1 - 4755

ER -

Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors

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ITF: Brain-inspired Kinetic Oxide Nanowires Artificial Visual Neurons

RFS: Developing Negative-Capacitance Nanowire Transistor Arrays and Integrated Circuits for Next-Generation Flexible Electronics

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Synthesis of hexagonal boron arsenide nanosheets for low-power consumption flexible memristors

Abstract

Funding

Publisher's Copyright Statement

RGC Funding Information

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Projects

ITF: Brain-inspired Kinetic Oxide Nanowires Artificial Visual Neurons

RFS: Developing Negative-Capacitance Nanowire Transistor Arrays and Integrated Circuits for Next-Generation Flexible Electronics

Cite this