Synthesis of Ge 1-xSn x alloy thin films using ion implantation and pulsed laser melting (II-PLM)

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

10 Scopus Citations
View graph of relations

Author(s)

  • A. Bhatia
  • W. M. Hlaing Oo
  • G. Siegel
  • P. R. Stone
  • M. A. Scarpulla

Detail(s)

Original languageEnglish
Pages (from-to)837-844
Journal / PublicationJournal of Electronic Materials
Volume41
Issue number5
Publication statusPublished - May 2012
Externally publishedYes

Abstract

Ge 1-xSn x thin films are interesting for all-group-IV optoelectronics because of a crossover to a direct bandgap with dilute Sn alloying. However, Sn has vanishing room-temperature equilibrium solubility in Ge, making their synthesis very challenging. Herein, we report on our attempts to synthesize Ge 1-xSn x films on Ge (001) using ion implantation and pulsed laser melting (II-PLM). A maximum of 2 at.% Sn was incorporated with our experimental conditions in the samples as determined by Rutherford back scattering spectroscopy. A red-shift in the Ge optical phonon branch and increased absorption below the Ge bandgap with increasing Sn concentration indicate Sn-induced lattice- and band-structure changes after II-PLM. However, ion-channeling and electron microscopy show that the films are not of sufficient epitaxial quality for use in devices. © 2011 TMS.

Research Area(s)

  • Ge 1-xSn x alloy, Ion implantation, Pulsed laser melting (PLM)

Citation Format(s)

Synthesis of Ge 1-xSn x alloy thin films using ion implantation and pulsed laser melting (II-PLM). / Bhatia, A.; Hlaing Oo, W. M.; Siegel, G. et al.
In: Journal of Electronic Materials, Vol. 41, No. 5, 05.2012, p. 837-844.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review