Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • W. Walukiewicz
  • M. A. Scarpulla
  • O. D. Dubon
  • J. Wu
  • J. Jasinski
  • Z. Liliental-Weber
  • J. W. Beeman
  • M. R. Pillai
  • M. J. Aziz

Detail(s)

Original languageEnglish
Pages (from-to)1043-1049
Journal / PublicationJournal of Applied Physics
Volume94
Issue number2
Publication statusPublished - 15 Jul 2003
Externally publishedYes

Abstract

The preparation of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs was described. The effects of N+ implantation dose, rapid thermal annealing temperature and laser energy fluence on the N incorporation as well as structural and optical properties of these films were investigated. It was found that when the energy fluence of the pulsed laser was increased above the threshold, both the melt duration and melt depth increased.

Citation Format(s)

Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs. / Yu, K. M.; Walukiewicz, W.; Scarpulla, M. A. et al.
In: Journal of Applied Physics, Vol. 94, No. 2, 15.07.2003, p. 1043-1049.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review