Synthesis of GaN nanocrystals by sequential ion implantation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • J. A. Wolk
  • K. M. Yu
  • E. D. Bourret-Courchesne
  • E. Johnson

Detail(s)

Original languageEnglish
Pages (from-to)2268-2270
Journal / PublicationApplied Physics Letters
Volume70
Issue number17
Publication statusPublished - 28 Apr 1997
Externally publishedYes

Abstract

We have synthesized GaN nanocrystals by sequential implantation of Ga and N ions into a sapphire substrate followed by a postimplantation anneal. The nanocrystals have been identified as the wurtzite phase α-GaN structure by transmission electron microscopy. We also found that the nanocrystals are aligned with the sapphire following the relationship: (0001)sapphire∥(0001)GaN and (1120)sapphire∥(1120)GaN. The use of a sapphire substrate allows for the measurements of optical properties, and near band-edge luminescence and the yellow band are observed in photoluminescence spectroscopy.

Citation Format(s)

Synthesis of GaN nanocrystals by sequential ion implantation. / Wolk, J. A.; Yu, K. M.; Bourret-Courchesne, E. D. et al.

In: Applied Physics Letters, Vol. 70, No. 17, 28.04.1997, p. 2268-2270.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review