Synthesis of GaN nanocrystals by sequential ion implantation
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 2268-2270 |
| Journal / Publication | Applied Physics Letters |
| Volume | 70 |
| Issue number | 17 |
| Publication status | Published - 28 Apr 1997 |
| Externally published | Yes |
Link(s)
Abstract
We have synthesized GaN nanocrystals by sequential implantation of Ga and N ions into a sapphire substrate followed by a postimplantation anneal. The nanocrystals have been identified as the wurtzite phase α-GaN structure by transmission electron microscopy. We also found that the nanocrystals are aligned with the sapphire following the relationship: (0001)sapphire∥(0001)GaN and (1120)sapphire∥(1120)GaN. The use of a sapphire substrate allows for the measurements of optical properties, and near band-edge luminescence and the yellow band are observed in photoluminescence spectroscopy.
Citation Format(s)
Synthesis of GaN nanocrystals by sequential ion implantation. / Wolk, J. A.; Yu, K. M.; Bourret-Courchesne, E. D. et al.
In: Applied Physics Letters, Vol. 70, No. 17, 28.04.1997, p. 2268-2270.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
