Synthesis of β-Ga2O3 nanowires by laser ablation

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)9536-9539
Journal / PublicationJournal of Physical Chemistry B
Volume106
Issue number37
Publication statusPublished - 19 Sept 2002

Abstract

A simple laser ablation method has been employed for the synthesis of β-Ga2O3 nanowires. The as-synthesized products were characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and room-temperature photoluminescence. The synthesized β-Ga2O3 nanowires have diameters of 15-50 nm and lengths up to several micrometers, and a few of the nanowires appear to have ring-shaped structures. Photoluminescence of the bulk β-Ga2O3 nanowires shows a stable and broad green emission band centered at 497 nm, which has a blueshift of 30 nm from β-Ga2O3 powder. Possible growth mechanisms of the β-Ga2O3 nanowires are briefly discussed.

Citation Format(s)

Synthesis of β-Ga2O3 nanowires by laser ablation. / Hu, J. Q.; Li, Q.; Meng, X. M. et al.
In: Journal of Physical Chemistry B, Vol. 106, No. 37, 19.09.2002, p. 9536-9539.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review