Synthesis of buried oxide by plasma implantation with oxygen and water plasma

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)

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Author(s)

  • J. B. Liu
  • S. S K Iyer
  • J. Min
  • R. Gronsky
  • C. Hu
  • N. W. Chueng

Detail(s)

Original languageEnglish
Title of host publicationIEEE International SOI Conference
PublisherIEEE
Pages166-167
Publication statusPublished - 1995
Externally publishedYes

Conference

TitleProceedings of the 1995 IEEE International SOI Conference
CityTucson, AZ, USA
Period3 - 5 October 1995

Abstract

Separation by plasma implantation of oxygen (SPIMOX) is a novel method for fabricating silicon-on-insulator (SOI) wafers. SPIMOX wafers were fabricated using an oxygen-plasma from an ECR plasma source operating at 2.45 GHz. The implantation was carried out with an implant voltage of 70 kV for 3 min to achieve a dose of 2×1017 cm-2. The wafer temperature was held at about 600°C during the implantation. The secondary ion mass spectroscopy spectrum of the as-implanted sample reveals a peaked oxygen profile below the surface. The implanted wafer was annealed at 1250°C for 2 hours. A cross-sectional transmission electron microscopy micrograph of the annealed sample shows an SOI structure with a silicon over-layer of 500 angstrom and buried oxide of 250 angstrom thickness.

Citation Format(s)

Synthesis of buried oxide by plasma implantation with oxygen and water plasma. / Liu, J. B.; Iyer, S. S K; Min, J.; Chu, P. K.; Gronsky, R.; Hu, C.; Chueng, N. W.

IEEE International SOI Conference. IEEE, 1995. p. 166-167.

Research output: Chapters, Conference Papers, Creative and Literary Works (RGC: 12, 32, 41, 45)32_Refereed conference paper (with ISBN/ISSN)