Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)719-724
Journal / PublicationReview of Scientific Instruments
Issue number3
Publication statusPublished - Mar 2004


The aluminum nitride films were deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source. By feeding the gas into the arc discharge region, the mixed metal and gaseous plasma was generated. It was shown that the compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 °C for 1 h. The results show that the hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasma.