Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

Liru Shen; Ricky K.Y. Fu; Paul K. Chu

doi:10.1063/1.1646741

Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

Liru Shen
, Ricky K.Y. Fu
, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

10 Citations (Scopus)

Abstract

The aluminum nitride films were deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source. By feeding the gas into the arc discharge region, the mixed metal and gaseous plasma was generated. It was shown that the compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 °C for 1 h. The results show that the hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasma.

Original language	English
Pages (from-to)	719-724
Journal	Review of Scientific Instruments
Volume	75
Issue number	3
DOIs	https://doi.org/10.1063/1.1646741
Publication status	Published - Mar 2004

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@article{791982450c794cc590b2f19688472e29,

title = "Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun",

abstract = "The aluminum nitride films were deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source. By feeding the gas into the arc discharge region, the mixed metal and gaseous plasma was generated. It was shown that the compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 °C for 1 h. The results show that the hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasma.",

author = "Liru Shen and Fu, \{Ricky K.Y.\} and Chu, \{Paul K.\}",

year = "2004",

month = mar,

doi = "10.1063/1.1646741",

language = "English",

volume = "75",

pages = "719--724",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

publisher = "American Institute of Physics",

number = "3",

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TY - JOUR

T1 - Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

AU - Shen, Liru

AU - Fu, Ricky K.Y.

AU - Chu, Paul K.

PY - 2004/3

Y1 - 2004/3

N2 - The aluminum nitride films were deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source. By feeding the gas into the arc discharge region, the mixed metal and gaseous plasma was generated. It was shown that the compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 °C for 1 h. The results show that the hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasma.

AB - The aluminum nitride films were deposited on silicon wafers (100) by metal plasma immersion ion implantation and deposition (PIIID) using a modified hybrid gas-metal cathodic arc plasma source. By feeding the gas into the arc discharge region, the mixed metal and gaseous plasma was generated. It was shown that the compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800 °C for 1 h. The results show that the hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasma.

UR - https://www.scopus.com/pages/publications/1842554783

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-1842554783&origin=recordpage

U2 - 10.1063/1.1646741

DO - 10.1063/1.1646741

M3 - RGC 21 - Publication in refereed journal

SN - 0034-6748

VL - 75

SP - 719

EP - 724

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 3

ER -

Synthesis of aluminum nitride films by plasma immersion ion implantation-deposition using hybrid gas-metal cathodic arc gun

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