Synthesis and optical properties of multiband III-V semiconductor alloys

K. M. Yu; W. Walukiewicz; R. Farshchi; O. D. Dubon; J. W. Ager III; I. D. Sharp; E. E. Haller

doi:10.1063/1.2730465

Synthesis and optical properties of multiband III-V semiconductor alloys

K. M. Yu, W. Walukiewicz, R. Farshchi, O. D. Dubon, J. W. Ager III, I. D. Sharp, E. E. Haller

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

Quaternary GaN_xAs_1-yP_y alloys have been synthesized using N ion implantation into GaAs_1-yP_y (y=0-0.4) epilayers followed by pulsed laser melting (II-PLM). We observed strong optical transitions from the valence band to both the lower (E_-) and upper (E₊) conduction subbands that arise from the N induced splitting of the conduction band (E_M) of the GaAs_1-yP_y host. As predicted by the band anticrossing model, GaN_xAs_1-xyP_y with y>0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells. © 2007 American Institute of Physics.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	28th International Conference on the Physics of Semiconductors
Editors	Wolfgang Jantsch, Friedrich Schäffler
Publisher	American Institute of Physics
Pages	1477-1478
Volume	Part A
ISBN (Print)	9780735403970
DOIs	https://doi.org/10.1063/1.2730465
Publication status	Published - 10 Apr 2007
Externally published	Yes
Event	28th International Conference on the Physics of Semiconductors (ICPS 2006) - Vienna, Austria Duration: 24 Jul 2006 → 28 Jul 2006

Publication series

Name	AIP Conference Proceedings
Number	1
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	28th International Conference on the Physics of Semiconductors (ICPS 2006)
Place	Austria
City	Vienna
Period	24/07/06 → 28/07/06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Research Keywords

GaAsP
Intermediate band solar cells
Multiband semiconductors
Pulsed laser melting

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10.1063/1.2730465

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Yu, K. M., Walukiewicz, W., Farshchi, R., Dubon, O. D., Ager III, J. W., Sharp, I. D., & Haller, E. E. (2007). Synthesis and optical properties of multiband III-V semiconductor alloys. In W. Jantsch, & F. Schäffler (Eds.), PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors (Vol. Part A, pp. 1477-1478). (AIP Conference Proceedings; Vol. 893, No. 1). American Institute of Physics. https://doi.org/10.1063/1.2730465

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title = "Synthesis and optical properties of multiband III-V semiconductor alloys",

abstract = "Quaternary GaNxAs1-yPy alloys have been synthesized using N ion implantation into GaAs1-yPy (y=0-0.4) epilayers followed by pulsed laser melting (II-PLM). We observed strong optical transitions from the valence band to both the lower (E-) and upper (E+) conduction subbands that arise from the N induced splitting of the conduction band (EM) of the GaAs1-yPy host. As predicted by the band anticrossing model, GaNxAs1-xyPy with y>0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells. {\textcopyright} 2007 American Institute of Physics.",

keywords = "GaAsP, Intermediate band solar cells, Multiband semiconductors, Pulsed laser melting",

author = "Yu, {K. M.} and W. Walukiewicz and R. Farshchi and Dubon, {O. D.} and {Ager III}, {J. W.} and Sharp, {I. D.} and Haller, {E. E.}",

year = "2007",

month = apr,

day = "10",

doi = "10.1063/1.2730465",

language = "English",

isbn = "9780735403970",

volume = "Part A",

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publisher = "American Institute of Physics",

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editor = "Wolfgang Jantsch and Friedrich Sch{\"a}ffler",

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Yu, KM, Walukiewicz, W, Farshchi, R, Dubon, OD, Ager III, JW, Sharp, ID & Haller, EE 2007, Synthesis and optical properties of multiband III-V semiconductor alloys. in W Jantsch & F Schäffler (eds), PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors. vol. Part A, AIP Conference Proceedings, no. 1, vol. 893, American Institute of Physics, pp. 1477-1478, 28th International Conference on the Physics of Semiconductors (ICPS 2006), Vienna, Austria, 24/07/06. https://doi.org/10.1063/1.2730465

Synthesis and optical properties of multiband III-V semiconductor alloys. / Yu, K. M.; Walukiewicz, W.; Farshchi, R. et al.
PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors. ed. / Wolfgang Jantsch; Friedrich Schäffler. Vol. Part A American Institute of Physics, 2007. p. 1477-1478 (AIP Conference Proceedings; Vol. 893, No. 1).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Synthesis and optical properties of multiband III-V semiconductor alloys

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Farshchi, R.

AU - Dubon, O. D.

AU - Ager III, J. W.

AU - Sharp, I. D.

AU - Haller, E. E.

PY - 2007/4/10

Y1 - 2007/4/10

N2 - Quaternary GaNxAs1-yPy alloys have been synthesized using N ion implantation into GaAs1-yPy (y=0-0.4) epilayers followed by pulsed laser melting (II-PLM). We observed strong optical transitions from the valence band to both the lower (E-) and upper (E+) conduction subbands that arise from the N induced splitting of the conduction band (EM) of the GaAs1-yPy host. As predicted by the band anticrossing model, GaNxAs1-xyPy with y>0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells. © 2007 American Institute of Physics.

AB - Quaternary GaNxAs1-yPy alloys have been synthesized using N ion implantation into GaAs1-yPy (y=0-0.4) epilayers followed by pulsed laser melting (II-PLM). We observed strong optical transitions from the valence band to both the lower (E-) and upper (E+) conduction subbands that arise from the N induced splitting of the conduction band (EM) of the GaAs1-yPy host. As predicted by the band anticrossing model, GaNxAs1-xyPy with y>0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells. © 2007 American Institute of Physics.

KW - GaAsP

KW - Intermediate band solar cells

KW - Multiband semiconductors

KW - Pulsed laser melting

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M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9780735403970

VL - Part A

T3 - AIP Conference Proceedings

SP - 1477

EP - 1478

BT - PHYSICS OF SEMICONDUCTORS

A2 - Jantsch, Wolfgang

A2 - Schäffler, Friedrich

PB - American Institute of Physics

T2 - 28th International Conference on the Physics of Semiconductors (ICPS 2006)

Y2 - 24 July 2006 through 28 July 2006

ER -

Yu KM, Walukiewicz W, Farshchi R, Dubon OD, Ager III JW, Sharp ID et al. Synthesis and optical properties of multiband III-V semiconductor alloys. In Jantsch W, Schäffler F, editors, PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors. Vol. Part A. American Institute of Physics. 2007. p. 1477-1478. (AIP Conference Proceedings; 1). doi: 10.1063/1.2730465

Synthesis and optical properties of multiband III-V semiconductor alloys

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Research Keywords

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